Datasheet > C1812C224J5RAC

C1812C224J5RAC

更新时间： 2024-10-29 12:53:59

品牌	Logo	应用领域
飞思卡尔 - FREESCALE		晶体晶体管功率场效应晶体管射频
页数	文件大小	规格书
19页	1443K
描述
RF Power Field Effect Transistor N--Channel Enhancement--Mode Lateral MOSFET

阅读下载

中文翻译

获取价格

数据手册

如果您发现信息不准确，欢迎纠错

C1812C224J5RAC 数据手册

Document Number: MRF6VP2600H

Rev. 5.1, 7/2010

Freescale Semiconductor

Technical Data

RF Power Field Effect Transistor

N--Channel Enhancement--Mode Lateral MOSFET

Designed primarily for wideband applications with frequencies up to 500 MHz.

Device is unmatched and is suitable for use in broadcast applications.

MRF6VP2600HR6

•

Typical DVB--T OFDM Performance: V_DD= 50 Volts, I_DQ= 2600 mA,

P_out= 125 Watts Avg., f = 225 MHz, Channel Bandwidth = 7.61 MHz,

Input Signal PAR = 9.3 dB @ 0.01% Probability on CCDF.

Power Gain — 25 dB

2--500 MHz, 600 W, 50 V

LATERAL N--CHANNEL

BROADBAND

Drain Efficiency — 28.5%

RF POWER MOSFET

ACPR @ 4 MHz Offset — --61 dBc @ 4 kHz Bandwidth

•

Typical Pulsed Performance: V_DD= 50 Volts, I_DQ= 2600 mA,

P_out= 600 Watts Peak, f = 225 MHz, Pulse Width = 100 μsec, Duty

Cycle = 20%

Power Gain — 25.3 dB

Drain Efficiency — 59%

Capable of Handling 10:1 VSWR, @ 50 Vdc, 225 MHz, 600 Watts Peak

Power, Pulse Width = 100 μsec, Duty Cycle = 20%

Features

•

Characterized with Series Equivalent Large--Signal Impedance Parameters

CASE 375D--05, STYLE 1

NI--1230

CW Operation Capability with Adequate Cooling

Qualified Up to a Maximum of 50 V_DDOperation

Integrated ESD Protection

Designed for Push--Pull Operation

Greater Negative Gate--Source Voltage Range for Improved Class C

Operation

PART IS PUSH--PULL

•

RoHS Compliant

In Tape and Reel. R6 Suffix = 150 Units per 56 mm, 13 inch Reel.

RF /V

outA DSA

inA GSA

RF /V

inB GSB

RF /V

outB DSB

(Top View)

Figure 1. Pin Connections

Table 1. Maximum Ratings

Rating

Symbol

Value

--0.5, +110

--6.0, +10

-- 65 to +150

150

Unit

Drain--Source Voltage

Vdc

°C

DSS

Gate--Source Voltage

Storage Temperature Range

Case Operating Temperature

Operating Junction Temperature

stg

°C

(1,2)

225

°C

Table 2. Thermal Characteristics

(2,3)

Characteristic

Symbol

Value

Unit

Thermal Resistance, Junction to Case

°C/W

Case Temperature 99°C, 125 W CW, 225 MHz, 50 Vdc, I = 2600 mA

0.20

0.14

0.16

Case Temperature 64°C, 610 W CW, 352.2 MHz, 50 Vdc, I

= 150 mA

Case Temperature 81°C, 610 W CW, 88--108 MHz, 50 Vdc, I

= 150 mA

1. Continuous use at maximum temperature will affect MTTF.

2. MTTF calculator available at http://www.freescale.com/rf. Select Software & Tools/Development Tools/Calculators to access MTTF

calculators by product.

3. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.freescale.com/rf.

Select Documentation/Application Notes -- AN1955.

MRF6VP2600HR6

RF Device Data

Freescale Semiconductor

12 3 4 5 6 7...19

中文翻译

下载PDF

与C1812C224J5RAC相关器件

型号	品牌	获取价格	描述	数据表
C1812C224J5RAC7025	KEMET	获取价格	Capacitor, Ceramic, Chip, General Purpose, 0.
C1812C224J5RACAUTO	KEMET	获取价格	Ceramic Capacitor, Multilayer, Ceramic, 50V, 5% +Tol, 5% -Tol, X7R, 15% TC, 0.22uF, Surfac
C1812C224J5RACTU	KEMET	获取价格	Capacitor, Ceramic, Chip, General Purpose, 0.
C1812C224K1RACTU	KEMET	获取价格	Ceramic, Commercial-(CxxxxC), 0.22 uF, 10%, 100 V, 1812, X7R, SMD, MLCC, Temperature Stabl
C1812C224K2RAC7800	KEMET	获取价格	Capacitor, Ceramic, Chip, General Purpose, 0.
C1812C224K5RAC	FREESCALE	获取价格	RF Power Field--Effect Transistors N--Channel Enhancement--Mode Lateral MOSFETs
C1812C224K5RAC7025	KEMET	获取价格	Capacitor, Ceramic, Chip, General Purpose, 0.
C1812C224K5RAC7210	KEMET	获取价格	Capacitor, Ceramic, Chip, General Purpose, 0.
C1812C224K5RAC7800	KEMET	获取价格	Capacitor, Ceramic, Chip, General Purpose, 0.
C1812C224K5RACAUTO	KEMET	获取价格	Ceramic Capacitor, Multilayer, Ceramic, 50V, 10% +Tol, 10% -Tol, X7R, 15% TC, 0.22uF, Surf

与C1812C224J5RAC相关文章

三星深化印度制造布局，供应链本地化进程加速
2024-10-29

15
芯擎科技“星辰一号”自动驾驶芯片点亮成功，2025年量产在即
2024-10-29

18
纳微科技震撼发布GaNSlim革新氮化镓功率芯片
2024-10-18

43
意法半导体发布第四代SiC技术，助力电动汽车电驱
2024-10-15

50

产品中心

服务支持

精选活动

关于我们

帮助中心

C1812C224J5RAC

C1812C224J5RAC 数据手册

与C1812C224J5RAC相关器件

与C1812C224J5RAC相关文章

您还可以找

产品中心

服务支持

精选活动

关于我们

帮助中心

C1812C224J5RAC

C1812C224J5RAC 数据手册

与C1812C224J5RAC相关器件

与C1812C224J5RAC相关文章

您还可以找

您在本页遇到什么问题？