Datasheet > C1812C224K5RAC

C1812C224K5RAC

更新时间： 2024-10-29 12:51:31

品牌	Logo	应用领域
飞思卡尔 - FREESCALE		晶体晶体管射频
页数	文件大小	规格书
18页	1498K
描述
RF Power Field--Effect Transistors N--Channel Enhancement--Mode Lateral MOSFETs

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C1812C224K5RAC 数据手册

Document Number: MRF6V2150N

Rev. 4, 4/2010

Freescale Semiconductor

Technical Data

RF Power Field--Effect Transistors

N--Channel Enhancement--Mode Lateral MOSFETs

MRF6V2150NR1

MRF6V2150NBR1

Designed primarily for CW large--signal output and driver applications with

frequencies up to 450 MHz. Devices are unmatched and are suitable for use in

industrial, medical and scientific applications.

•

Typical CW Performance at 220 MHz: V_DD= 50 Volts, I_DQ= 450 mA,

10--450 MHz, 150 W, 50 V

LATERAL N--CHANNEL

SINGLE--ENDED

BROADBAND

RF POWER MOSFETs

P_out= 150 Watts

Power Gain — 25 dB

Drain Efficiency — 68.3%

Capable of Handling 10:1 VSWR, @ 50 Vdc, 220 MHz, 150 Watts CW

Output Power

Features

CASE 1486--03, STYLE 1

T O -- 2 7 0 W B -- 4

•

Characterized with Series Equivalent Large--Signal Impedance Parameters

Qualified Up to a Maximum of 50 V_DDOperation

Integrated ESD Protection

PLASTIC

MRF6V2150NR1

225°C Capable Plastic Package

RoHS Compliant

In Tape and Reel. R1 Suffix = 500 Units per 44 mm, 13 inch Reel.

CASE 1484--04, STYLE 1

T O -- 2 7 2 W B -- 4

PLASTIC

MRF6V2150NBR1

PARTS ARE SINGLE--ENDED

Table 1. Maximum Ratings

Rating

Symbol

Value

-- 0.5, +110

-- 0.5, +12

-- 65 to +150

150

Unit

Vdc

°C

RF /V

in GS

RF /V

out DS

Drain--Source Voltage

DSS

Gate--Source Voltage

Storage Temperature Range

Case Operating Temperature

Operating Junction Temperature

stg

RF /V

in GS

RF /V

out DS

°C

(1,2)

225

°C

(Top View)

Table 2. Thermal Characteristics

Characteristic

Note: Exposed backside of the package is

the source terminal for the transistor.

(2,3)

Symbol

Value

Unit

Thermal Resistance, Junction to Case

Case Temperature 80°C, 150 W CW

Figure 1. Pin Connections

0.24

°C/W

Table 3. ESD Protection Characteristics

Test Methodology

Class

Human Body Model (per JESD22--A114)

Machine Model (per EIA/JESD22--A115)

Charge Device Model (per JESD22--C101)

2 (Minimum)

A (Minimum)

IV (Minimum)

1. Continuous use at maximum temperature will affect MTTF.

2. MTTF calculator available at http://www.freescale.com/rf. Select Software & Tools/Development Tools/Calculators to access

MTTF calculators by product.

3. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.freescale.com/rf.

Select Documentation/Application Notes -- AN1955.

MRF6V2150NR1 MRF6V2150NBR1

RF Device Data

Freescale Semiconductor

12 3 4 5 6 7...18

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与C1812C224K5RAC相关器件

型号	品牌	获取价格	描述	数据表
C1812C224K5RAC7025	KEMET	获取价格	Capacitor, Ceramic, Chip, General Purpose, 0.
C1812C224K5RAC7210	KEMET	获取价格	Capacitor, Ceramic, Chip, General Purpose, 0.
C1812C224K5RAC7800	KEMET	获取价格	Capacitor, Ceramic, Chip, General Purpose, 0.
C1812C224K5RACAUTO	KEMET	获取价格	Ceramic Capacitor, Multilayer, Ceramic, 50V, 10% +Tol, 10% -Tol, X7R, 15% TC, 0.22uF, Surf
C1812C224K5RACTU	KEMET	获取价格	Capacitor, Ceramic, Chip, General Purpose, 0.
C1812C224KARACTU	KEMET	获取价格	SMD Comm X7R Tip-Ring, Ceramic, 0.22 uF, 10%, 250 V, X7R, SMD, MLCC, Temperature Stable, S
C1812C224KCRACAUTO	KEMET	获取价格	Ceramic Capacitor, Multilayer, Ceramic, 500V, X7R, -/+15ppm/Cel TC, 0.22uF, 1812
C1812C224KCRACTU	KEMET	获取价格	Capacitor, Ceramic, SMD, MLCC, High Voltage, Temperature Stable
C1812C225J1RAC7025	KEMET	获取价格	Ceramic Capacitor, Multilayer, Ceramic, 100V, 5% +Tol, 5% -Tol, X7R, -/+15ppm/Cel TC, 2.2u
C1812C225J1RACAUTO	KEMET	获取价格	Surface Mount Multilayer Ceramic Chip Capacitors (SMD MLCCs)

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