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BZX85C4V3-TAP PDF预览

BZX85C4V3-TAP

更新时间: 2024-11-18 22:57:19
品牌 Logo 应用领域
威世 - VISHAY 测试二极管
页数 文件大小 规格书
6页 110K
描述
DIODE ZENER 4.3V 1.3W DO41

BZX85C4V3-TAP 技术参数

是否无铅: 不含铅是否Rohs认证: 符合
生命周期:Obsolete包装说明:O-LALF-W2
Reach Compliance Code:unknownECCN代码:EAR99
HTS代码:8541.10.00.50风险等级:7.22
其他特性:LOW NOISE外壳连接:ISOLATED
配置:SINGLE二极管元件材料:SILICON
二极管类型:ZENER DIODEJEDEC-95代码:DO-41
JESD-30 代码:O-LALF-W2元件数量:1
端子数量:2最高工作温度:175 °C
封装主体材料:GLASS封装形状:ROUND
封装形式:LONG FORM峰值回流温度(摄氏度):NOT SPECIFIED
极性:UNIDIRECTIONAL最大功率耗散:1.3 W
认证状态:Not Qualified标称参考电压:4.3 V
表面贴装:NO技术:ZENER
端子形式:WIRE端子位置:AXIAL
处于峰值回流温度下的最长时间:NOT SPECIFIED最大电压容差:6.98%
工作测试电流:50 mABase Number Matches:1

BZX85C4V3-TAP 数据手册

 浏览型号BZX85C4V3-TAP的Datasheet PDF文件第2页浏览型号BZX85C4V3-TAP的Datasheet PDF文件第3页浏览型号BZX85C4V3-TAP的Datasheet PDF文件第4页浏览型号BZX85C4V3-TAP的Datasheet PDF文件第5页浏览型号BZX85C4V3-TAP的Datasheet PDF文件第6页 
BZX85-Series  
Vishay Semiconductors  
www.vishay.com  
Zener Diodes  
FEATURES  
• Silicon planar power Zener diodes  
• For use in stabilizing and clipping circuits with  
high power rating  
• The Zener voltages are graded according to the  
international E 24 standard. Replace suffix “C”  
with “B” for 2 % tolerance  
• AEC-Q101 qualified  
• Material categorization: for definitions of compliance  
please see www.vishay.com/doc?99912  
DESIGN SUPPORT TOOLS AVAILABLE  
3
D
3
D
APPLICATIONS  
3D Models  
• Voltage stabilization  
PRIMARY CHARACTERISTICS  
PARAMETER  
VALUE  
2.7 to 100  
2.7 to 80  
Pulse current  
Single  
UNIT  
V
VZ range nom.  
Test current IZT  
VZ specification  
Circuit configuration  
mA  
ORDERING INFORMATION  
DEVICE NAME  
ORDERING CODE  
TAPED UNITS PER REEL  
MINIMUM ORDER QUANTITY  
BZX85-series  
BZX85-series-TR  
5000 (52 mm tape on 13" reel)  
25 000/box  
5000 per ammopack  
(52 mm tape)  
BZX85-series  
BZX85-series-TAP  
25 000/box  
PACKAGE  
MOLDING COMPOUND  
MOISTURE SENSITIVITY  
LEVEL  
PACKAGE NAME  
WEIGHT  
310 mg  
SOLDERING CONDITIONS  
FLAMMABILITY RATING  
MSL level 1  
(according J-STD-020)  
DO-41 (DO-204AL)  
UL 94 V-0  
Peak temperature max. 260 °C  
ABSOLUTE MAXIMUM RATINGS (Tamb = 25 °C, unless otherwise specified)  
PARAMETER  
TEST CONDITION  
SYMBOL  
VALUE  
UNIT  
Valid provided that leads at a distance of 4 mm  
from case are kept at ambient temperature  
Power dissipation  
Zener current  
Ptot  
1300  
mW  
See Table “Electrical characteristics”  
Valid provided that leads at a distance of 4 mm  
from case are kept at ambient temperature  
Junction to ambient air  
RthJA  
110  
K/W  
Tj  
Junction temperature  
175  
°C  
°C  
Tstg  
Storage temperature range  
-55 to +175  
Rev. 2.3, 12-Mar-2019  
Document Number: 85607  
1
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com  
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT  
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000  

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