Datasheet > BZX84C9V1LYFH

BZX84C9V1LYFH

更新时间： 2024-11-07 11:14:27

品牌	Logo	应用领域
罗姆 - ROHM		二极管齐纳二极管
页数	文件大小	规格书
7页	1575K
描述
BZX84C9V1LYFH是适用于恒定电压控制用途的齐纳二极管。采用非常普遍的SOT-23封装，容易进行设计。是符合AEC-Q101标准的高可靠性产品。

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BZX84C9V1LYFH 数据手册

BZX84C9V1LYFH

Zener Diode

(AEC-Q101 qualified)

Data sheet

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●Inner Circuit

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250

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●Features

●Inner Circuit

High reliability

Small mold type

●Application

●Packaging Specifications

Packing

Embossed Tape

Voltage regulation

180

3000

T116

D4S

Reel Size(mm)

Taping Width(mm)

Quantity(pcs)

●Structure

Silicon Epitaxial Planar

Taping Code

Marking

(T = 25℃)

●Absolute Maximum Ratings

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Parameter

Symbol

Condition

Limits

250

2.0

Unit

mW/°C

℃

Power dissipation

on Glass-epoxy substrate

Junction temperature

Storage temperature

150

-65 ～ 150ꢀ

stg

℃

(T = 25℃)

●Characteristic

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Parameter

Zener Voltage

Symbol

Conditions

I = 5mA

V = 6.0V

I = 5mA

Min. Typ. Max. Unit

8.50

9.60

0.5

μA

Reverse Current

Dynamic Impedance

I = 5mA

Temperature Coefficient

3.9

6.9 mV/℃

Zener voltage (V ) is measured byapplying current with 40ms pulse.

Dynamic resistance (Z ) is measured by applying small current (AC) and

specified current (I ) simultaneously.

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www.rohm.com

1/4

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2020/05/14_Rev.002

12 3 4 5 6 7

中文翻译

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