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BZX84C6V2 PDF预览

BZX84C6V2

更新时间: 2024-11-08 12:33:35
品牌 Logo 应用领域
TYSEMI 二极管测试光电二极管
页数 文件大小 规格书
2页 114K
描述
Planar Die Construction, 350mW Power Dissipation

BZX84C6V2 数据手册

 浏览型号BZX84C6V2的Datasheet PDF文件第2页 
Product specification  
BZX84C6V2  
SOT-23  
Unit: mm  
+0.1  
-0.1  
2.9  
0.4  
+0.1  
-0.1  
Features  
3
Planar Die Construction  
350mW Power Dissipation  
Ideally Suited for Automated Assembly Processes  
1
2
+0.1  
0.95  
-0.1  
+0.05  
0.1  
-0.01  
+0.1  
-0.1  
1.9  
Absolute Maximum Ratings Ta = 25  
Parameter  
Forward Voltage at IF = 10 mA  
Power Dissipation *  
Symbol  
VF  
Rating  
0.9  
Unit  
V
PD  
350  
mW  
Junction Temperature  
Tj  
150  
Storage Temperature Range  
Thermal Resistance Junction to Ambient Air *  
TS  
-65 to + 150  
417  
RthA  
/W  
*Device mounted on FR-4 PC board with recommended pad layout,  
Electrical Characteristics Ta = 25 (unless otherwise noted)  
Typical Temperature  
Coefficient  
@ IZT  
Maximum  
Reverse  
Current  
*1  
Zener Voltage  
Maximum Zener  
Impedance  
*2  
Range  
*1  
Type  
mV/  
Number  
ZZT @  
IZT  
VZ @ IZT  
ZZK @ IZK  
IZT  
IR  
VR  
Min  
0.4  
Max  
3.7  
Nom (V)  
6.2  
Min (V) Max (V)  
mA  
5.0  
mA  
1.0  
V
4
A
BZX84C6V2  
5.8  
6.6  
10  
150  
3
*1. Short duration test pulse used to minimize self-heating effect.  
*2. f = 1KHz.  
Marking  
Marking  
Z4  
http://www.twtysemi.com  
sales@twtysemi.com  
4008-318-123  
1 of 2  

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