BZX84CxxxET1G Series, SZBZX84CxxxET1G Series
ELECTRICAL CHARACTERISTICS
(Pinout: 1-Anode, 2-No Connection, 3-Cathode) (T = 25C unless otherwise noted, V = 0.90 V Max. @ I = 10 mA)
A
F
F
V
Z2
(V)
Max
V
(V)
= 5 mA
@ I
= 1
mA
V
(V)
Reverse
Leakage
Current
q
VZ
(mV/k)
Z1
ZT2
Z3
Z
(W)
@ I
Z
(W)
@ I
Z
ZT3
(W)
@
C (pF)
@
ZT1
ZT2
@ I
@ I =20 mA
ZT1
(Note 4)
ZT3
(Note 4)
(Note 4)
@ I =5 mA
ZT1
V = 0
ZT1
=
ZT2
=
R
I
V
(V)
Device
I
=
f =
R
mA
R
ZT3
@
Min Nom Max
Min Max
Min
Max
Min Max
Device*
Marking
1 MHz
450
450
450
450
450
450
450
260
225
200
185
155
140
135
130
130
130
130
120
110
105
100
85
5 mA
1 mA
20 mA
50
50
50
40
40
30
30
15
15
10
6
BZX84C2V4ET1G
BZX84C2V7ET1G
BZX84C3V0ET1G
BZX84C3V3ET1G
BZX84C3V6ET1G
BZX84C3V9ET1G
BZX84C4V3ET1G
BZX84C4V7ET1G
BZX84C5V1ET1G
BZX84C5V6ET1G
BZX84C6V2ET1G
BZX84C6V8ET1G
BZX84C7V5ET1G
BZX84C8V2ET1G
BZX84C9V1ET1G
BZX84C10ET1G
BZX84C11ET1G
BZX84C12ET1G
BZX84C13ET1G
BZX84C15ET1G
BZX84C16ET1G
BZX84C18ET1G
BZX84C20ET1G
BZX84C22ET1G
BZX84C24ET1G
BA1
BA2
BA3
BA4
BA5
BA6
BA7
BA9
BB1
BB2
BB3
BB4
BB5
BB6
BB7
BB8
BB9
BC1
BC2
BC3
BC4
BC5
BC6
BC7
BC8
2.2
2.5
2.4
2.7
3.0
3.3
3.6
3.9
4.3
4.7
5.1
5.6
6.2
6.8
7.5
8.2
9.1
10
2.6
2.9
100
100
95
95
90
90
90
80
60
40
10
15
15
15
15
20
20
25
30
30
40
45
55
55
70
1.7
1.9
2.1
2.3
2.7
2.9
3.3
3.7
4.2
4.8
5.6
6.3
6.9
7.6
8.4
9.3
2.1
2.4
2.7
2.9
3.3
3.5
4.0
4.7
5.3
6.0
6.6
7.2
7.9
8.7
9.6
10.6
600
600
600
600
600
600
600
500
480
400
150
80
2.6
3.0
3.2
3.6
50
1.0
1.0
1.0
1.0
1.0
1.0
1.0
2.0
2.0
2.0
4.0
4.0
5.0
5.0
6.0
7.0
8.0
8.0
8.0
−3.5
−3.5
−3.5
−3.5
−3.5
0
0
0
0
0
20
10
2.8
3.2
3.3
3.9
3.1
3.5
3.6
4.2
5.0
5.0
3.0
3.0
3.0
2.0
1.0
3.0
2.0
1.0
0.7
0.5
0.2
0.1
0.1
0.1
3.4
3.8
3.9
4.5
3.7
4.1
4.1
4.7
−3.5 −2.5
−3.5
4.0
4.6
4.4
5.1
0
4.4
5.0
4.5
5.4
−3.5 0.2
−2.7 1.2
4.8
5.4
5.0
5.9
5.2
6.0
5.2
6.3
−2
0.4
1.2
2.5
3.2
3.8
4.5
5.4
6.0
7.0
9.2
2.5
3.7
4.5
5.3
6.2
7.0
8.0
9.0
10
5.8
6.6
5.8
6.8
6.4
7.2
6.4
7.4
6
7.0
7.9
80
7.0
8.0
6
7.7
8.7
80
7.7
8.8
6
8.5
9.6
100
150
150
150
170
200
200
225
225
250
250
8.5
9.7
8
9.4
10.6
11.6
12.7
14.1
15.6
17.1
19.1
21.2
23.3
25.6
9.4
10.7
11.8
12.9
14.2
15.7
17.2
19.2
21.4
23.4
25.7
10
10
10
15
20
20
20
20
25
25
10.4
11.4
12.4
13.8
15.3
16.8
18.8
20.8
22.8
11
10.2 11.6
11.2 12.7
10.4
11.4
12.5
13.9
15.4
16.9
18.9
20.9
22.9
12
13
12.3
14
11
15
13.7 15.5
0.05 10.5
13
16
15.2
16.7
17
19
0.05 11.2 10.4
0.05 12.6 12.4
14
18
16
20
18.7 21.1
20.7 23.2
22.7 25.5
0.05
14
14.4
18
22
0.05 15.4 16.4
0.05 16.8 18.4
20
85
24
22
80
q
VZ
Max
(mV/k)
Below
V
@ I
Below
Reverse
Leakage
Current
Z2
Z
Z
Z
ZT3
Below
@ I
ZT3
C (pF)
ZT1
ZT2
V
Z1
Below
=
V
Below
= 10 mA
@ I
= 2
ZT2
Z3
ZT1
Below
@ I
Below
@ I
@ V
R
@ I
= 2 mA
0.1 mA
@ I
mA
ZT1
ZT3
= 0
f =
1 MHz
ZT1
=
ZT4
=
I
V
(V)
Device
Marking
=
R
R
@
Min Nom Max
Min Max
Min
Max
Min Max
mA
Device*
BZX84C27ET1G
BZX84C30ET1G
BZX84C33ET1G
BZX84C36ET1G
BZX84C39ET1G
BZX84C43ET1G
BZX84C47ET1G
BZX84C51ET1G
BZX84C56ET1G
BZX84C62ET1G
BZX84C68ET1G
BZX84C75ET1G
2 mA
0.5 mA
300
300
325
350
350
375
375
400
425
450
475
500
10 mA
BC9
BD1
BD2
BD3
BD4
BK6
BD5
BD6
BD7
BD8
BD9
BE1
25.1
28
31
34
37
40
44
48
52
58
64
70
27
30
33
36
39
43
47
51
56
62
68
75
28.9
32
35
38
41
46
50
54
60
66
72
79
80
25
28.9
32
35
38
41
46
50
54
60
66
72
79
25.2
28.1
31.1
34.1
37.1
40.1
44.1
48.1
52.1
58.2
64.2
70.3
29.3
32.4
35.4
38.4
41.5
46.5
50.5
54.6
60.8
67
45
0.05 18.9 21.4 25.3
0.05 21 24.4 29.4
70
70
70
70
45
40
40
40
40
35
35
35
80
27.8
30.8
33.8
36.7
39.7
43.7
47.6
51.5
57.4
63.4
69.4
50
80
55
0.05 23.1 27.4 33.4
0.05 25.2 30.4 37.4
0.05 27.3 33.4 41.2
0.05 30.1 37.6 46.6
90
60
130
150
170
180
200
215
240
255
70
80
90
0.05 32.9
42
51.8
100
110
120
130
140
0.05 35.7 46.6 57.2
0.05 39.2 52.2 63.8
0.05 43.4 58.8 71.6
0.05 47.6 65.6 79.8
0.05 52.5 73.4 88.6
73.2
80.2
4. Zener voltage is measured with a pulse test current I at an ambient temperature of 25C
Z
* Include SZ-prefix devices where applicable.
http://onsemi.com
3