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BZX84C3V9LT1 PDF预览

BZX84C3V9LT1

更新时间: 2024-11-27 22:16:27
品牌 Logo 应用领域
乐山 - LRC 半导体
页数 文件大小 规格书
5页 170K
描述
SEMICONDUCTOR(TECHNICAL DATA)

BZX84C3V9LT1 数据手册

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LESHAN RADIO COMPANY, LTD.  
SEMICONDUCTOR  
TECHNICAL DATA  
BZX84C2V4LT1  
SERIES  
225mW  
SOT-23  
225 mW SOT-23  
Zener Voltage Regulator Diodes  
GENERAL DATA APPLICABLE TO ALL  
SERIES IN THIS GROUP  
3
1
Cathode  
Anode  
Zener Voltage  
3
Regulator Diodes  
1
2
CASE 318–07, STYLE8  
SOT– 23 (TO–236AB)  
PLASTIC  
MAXIMUM CASE TEMPERATURE FOR SOLDERING  
PURPOSES: 260°C for 10 seconds  
THERMALCHARACTERISTICS  
Characteristic  
Symbol  
Max  
Unit  
Total Device Dissipation FR-5 Board*  
TA = 25°C  
PD  
225  
mW  
Derate above 25°C  
1.8  
556  
300  
mW/°C  
°C/W  
mW  
Thermal Resistance Junction to Ambient  
Total Device Dissipation  
RQJA  
PD  
Alumina Substrate,** TA = 25°C  
Derate above 25°C  
2.4  
417  
150  
mW/°C  
°C/W  
°C  
Thermal Resistance Junction to Ambient  
Junction and Storage Temeprature  
**FR-5 = 1.0 x 0.75 x 0.62 in.  
**Alumina = 0.4 x 0.3 x 0.024 in. 99.5% alumina.  
R QJA  
TJ , Tstg  
J2–1/5  

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