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BZX84B68LT1G

更新时间： 2024-11-13 03:05:31
品牌 Logo 应用领域
安森美 - ONSEMI /
页数 文件大小 规格书
7页 176K
描述
68V, SILICON, UNIDIRECTIONAL VOLTAGE REGULATOR DIODE, LEAD FREE, PLASTIC PACKAGE-3

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BZX84B68LT1G 数据手册

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BZX84B4V7LT1,  
BZX84C2V4LT1 Series  
Zener Voltage Regulators  
225 mW SOT−23 Surface Mount  
This series of Zener diodes is offered in the convenient, surface  
mount plastic SOT−23 package. These devices are designed to provide  
voltage regulation with minimum space requirement. They are well  
suited for applications such as cellular phones, hand held portables,  
and high density PC boards.  
http://onsemi.com  
3
1
Cathode  
Anode  
Features  
• 225 mW Rating on FR−4 or FR−5 Board  
• Zener Breakdown Voltage Range − 2.4 V to 75 V  
• Package Designed for Optimal Automated Board Assembly  
• Small Package Size for High Density Applications  
• ESD Rating of Class 3 (>16 KV) per Human Body Model  
• Tight Tolerance Series Available (See Page 4)  
• Pb−Free Packages are Available  
MARKING  
DIAGRAM  
3
SOT−23  
CASE 318  
STYLE 8  
xxx M G  
G
1
2
1
Mechanical Characteristics  
CASE: Void-free, transfer-molded, thermosetting plastic case  
FINISH: Corrosion resistant finish, easily Solderable  
MAXIMUM CASE TEMPERATURE FOR SOLDERING PURPOSES:  
260°C for 10 Seconds  
POLARITY: Cathode indicated by polarity band  
FLAMMABILITY RATING: UL 94 V−0  
xxx  
M
= Device Code  
= Date Code*  
= Pb−Free Package  
G
(Note: Microdot may be in either location)  
* Date Code orientation may vary depending  
upon manufacturing location.  
ORDERING INFORMATION  
MAXIMUM RATINGS  
†
Device  
BZX84CxxxLT1  
Package  
Shipping  
Rating  
Symbol  
Max  
Unit  
SOT−23  
3000/Tape & Reel  
3000/Tape & Reel  
Total Power Dissipation on FR−5 Board,  
(Note 1) @ T = 25°C  
Derated above 25°C  
P
D
225  
1.8  
556  
mW  
mW/°C  
°C/W  
A
BZX84CxxxLT1G SOT−23  
(Pb−Free)  
Thermal Resistance, Junction−to−Ambient  
R
q
JA  
BZX84CxxxLT3  
SOT−23 10,000/Tape & Reel  
Total Power Dissipation on Alumina  
P
D
BZX84CxxxLT3G SOT−23 10,000/Tape & Reel  
(Pb−Free)  
Substrate, (Note 2) @ T = 25°C  
300  
2.4  
417  
mW  
mW/°C  
°C/W  
A
Derated above 25°C  
Thermal Resistance, Junction−to−Ambient  
R
q
JA  
BZX84BxxxLT1  
SOT−23  
3000/Tape & Reel  
3000/Tape & Reel  
Junction and Storage Temperature Range  
T , T  
−65 to  
+150  
°C  
J
stg  
BZX84BxxxLT1G  
SOT−23  
(Pb−Free)  
Stresses exceeding Maximum Ratings may damage the device. Maximum  
Ratings are stress ratings only. Functional operation above the Recommended  
Operating Conditions is not implied. Extended exposure to stresses above the  
Recommended Operating Conditions may affect device reliability.  
1. FR−5 = 1.0 X 0.75 X 0.62 in.  
BZX84BxxxLT3  
SOT−23 10,000/Tape & Reel  
BZX84BxxxLT3G  
SOT−23 10,000/Tape & Reel  
(Pb−Free)  
2. Alumina = 0.4 X 0.3 X 0.024 in., 99.5% alumina.  
†For information on tape and reel specifications,  
including part orientation and tape sizes, please  
refer to our Tape and Reel Packaging Specification  
Brochure, BRD8011/D.  
DEVICE MARKING INFORMATION  
See specific marking information in the device marking  
column of the Electrical Characteristics table on page 3 of  
this data sheet.  
© Semiconductor Components Industries, LLC, 2009  
1
Publication Order Number:  
July, 2009 − Rev. 13  
BZX84C2V4LT1/D  
 
1234567

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