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BZX384C30-GS18 PDF预览

BZX384C30-GS18

更新时间: 2024-11-14 03:28:55
品牌 Logo 应用领域
威世 - VISHAY 测试二极管
页数 文件大小 规格书
9页 236K
描述
Zener Diode, 30V V(Z), 5%, 0.2W, Silicon, Unidirectional, PLASTIC PACKAGE-2

BZX384C30-GS18 技术参数

是否Rohs认证: 符合生命周期:Obsolete
Reach Compliance Code:compliantECCN代码:EAR99
HTS代码:8541.10.00.50风险等级:5.82
配置:SINGLE二极管类型:ZENER DIODE
最大动态阻抗:80 ΩJESD-609代码:e3
元件数量:1最高工作温度:150 °C
最大功率耗散:0.2 W标称参考电压:30 V
子类别:Voltage Reference Diodes表面贴装:YES
端子面层:Matte Tin (Sn)最大电压容差:5%
工作测试电流:2 mA

BZX384C30-GS18 数据手册

 浏览型号BZX384C30-GS18的Datasheet PDF文件第2页浏览型号BZX384C30-GS18的Datasheet PDF文件第3页浏览型号BZX384C30-GS18的Datasheet PDF文件第4页浏览型号BZX384C30-GS18的Datasheet PDF文件第5页浏览型号BZX384C30-GS18的Datasheet PDF文件第6页浏览型号BZX384C30-GS18的Datasheet PDF文件第7页 
BZX384-Series  
Vishay Semiconductors  
VISHAY  
Small Signal Zener Diodes  
Features  
• Silicon Planar Power Zener Diodes  
• The Zener voltages are graded according to the  
international E 24 standard.  
• Standard Zener voltage tolerance is ± 5 %.  
Replace "C" with "B" for ± 2 % tolerance.  
17431  
Mechanical Data  
Case: SOD-323 Plastic case  
Weight: approx. 5.0 mg  
Packaging Codes/Options:  
GS18 / 10 k per 13 " reel (8 mm tape), 10 k/box  
GS08 / 3 k per 7 " reel (8 mm tape), 15 k/box  
Absolute Maximum Ratings  
T
= 25 °C, unless otherwise specified  
amb  
Parameter  
Test condition  
Symbol  
Value  
Unit  
mW  
1)  
Power dissipation  
P
tot  
200  
1)  
Device on fiberglass substrate  
Thermal Characteristics  
T
= 25 °C, unless otherwise specified  
amb  
Parameter  
Test condition  
Symbol  
Value  
Unit  
1)  
Thermal resistance junction to  
ambient air  
R
°C/W  
thJA  
650  
Junction temperature  
T
150  
°C  
°C  
j
Storage temperature range  
T
- 65 to + 150  
S
1)  
Valid that electrodes are kept at ambient temperature  
Document Number 85764  
Rev. 1.5, 08-Jul-04  
www.vishay.com  
1

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