Datasheet > BZW04P213/E2

BZW04P213/E2

更新时间： 2024-11-07 03:37:07

品牌	Logo	应用领域
威世 - VISHAY		/
页数	文件大小	规格书
4页	73K
描述
Trans Voltage Suppressor Diode, 400W, Unidirectional, 1 Element, Silicon, DO-204AL, PLASTIC, DO-41, 2 PIN

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BZW04P213/E2 数据手册

BZW04P-5V8 thru BZW04-376

TRANSZORB^®Transient Voltage Suppressor

Peak Pulse Power 400W

Stand-off Voltage 5.8 to 376V

DO-204AL (DO-41 Plastic)

Features

• Plastic package has Underwriters Laboratory

Flammability Classification 94V-0

• Glass passivated junction

1.0 (25.4)

MIN.

• 400W peak pulse power capabililty with a 10/1000µs

waveform, repetition rate (duty cycle): 0.01%

• Excellent clamping capability

• Low incremental surge resistance

• Very fast response time

0.107 (2.7)

0.080 (2.0)

DIA.

• Typical I less than 1µA above 10V rating

0.205 (5.2)

0.160 (4.1)

• High temperature soldering guaranteed:

265^OC/10 seconds, 0.375” (9.5mm) lead length,

5lbs. (2.3 kg) tension

Mechanical Data

Case: JEDEC DO-204AL molded plastic body over

passivated junction

1.0 (25.4)

MIN.

Terminals: Plated axial leads, solderable per

MIL-STD-750, Method 2026

0.034 (0.86)

0.028 (0.71)

DIA.

Polarity: For unidirectional types the color band

denotes the cathode, which is positive with respect

to the anode under normal TVS operation

Dimensions in inches and (millimeters)

Mounting Position: Any

Weight: 0.012oz., 0.3g

Devices for Bidirectional Applications

For bi-directional use add suffix letter “B” (e.g. BZW04P-6V4B).

Electrical characteristics apply in both directions.

Packaging codes/options:

E2/4K per Ammo mag. (52 mm tape), 20K/box

E3/5K per 13” reel (52mm tape), 10K/box

Maximum Ratings and Thermal Characteristics(T_A= 25°C unless otherwise noted)

Parameter

Symbol

Limit

Minimum 400

See Next Table

1.0

Unit

Peak pulse power dissipation with a 10/1000µs waveform

(Note 1, Fig. 1)

P_PPM

Peak pulse current with a 10/1000µs waveform (Note 1)

I_PPM

Steady state power dissipation

P_M(AV)

at T_L= 75^OC, lead lengths 0.375” (9.5mm) (Note 2)

Peak forward surge current, 8.3ms

single half sine-wave superimposed on rated load

(JEDEC Method) unidirectional only (Note 3)

I_FSM

Maximum instantaneous forward voltage

at 25A for unidirectional only (Note 4)

V_F

3.5/5.0

Operating junction and storage temperature range

T_J, T_STG

–55 to +175

°C

Notes: (1) Non-repetitive current pulse, per Fig.3 and derated above T_A= 25°C per Fig. 2

(2) Mounted on copper pad area of 1.6 x 1.6” (40 x 40mm) per Fig. 5

(3) Measured on 8.3ms single half sine-wave or equivalent square wave, duty cycle = 4 pulses per minute maximum

(4) V_F= 3.5V for devices of V_(BR)< 220V, and V_F= 5.0 Volt max. for devices of V_(BR)> 220V

6/29/00

12 3 4

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与BZW04P213/E2相关器件

型号	品牌	获取价格	描述	数据表
BZW04P213/E3	VISHAY	获取价格	Trans Voltage Suppressor Diode, 400W, Unidirectional, 1 Element, Silicon, DO-204AL, PLASTI
BZW04P213B	BL Galaxy Electrical	获取价格	TRANSIENT VOLTAGE SUPPRESSOR
BZW04P213B	TAYCHIPST	获取价格	Transient Voltage Suppressors
BZW04P213B	VISHAY	获取价格	TRANSZORB® Transient Voltage Suppressors
BZW04P213B	DBLECTRO	获取价格	GLASS PASSIVATED JUNCTION TRANSIENT VOLTAGE SUPPRESSOR VOLTAGE - 6.8 to 440 Volts 400 Watt
BZW04P213B	STMICROELECTRONICS	获取价格	400W, BIDIRECTIONAL, SILICON, TVS DIODE
BZW04P213B/100	VISHAY	获取价格	Trans Voltage Suppressor Diode, 400W, 213V V(RWM), Bidirectional, 1 Element, Silicon, DO-2
BZW04P213B/4E	VISHAY	获取价格	Trans Voltage Suppressor Diode, 400W, 213V V(RWM), Bidirectional, 1 Element, Silicon, DO-2
BZW04P213B/4F	VISHAY	获取价格	Trans Voltage Suppressor Diode, 400W, 213V V(RWM), Bidirectional, 1 Element, Silicon, DO-2
BZW04P213B/4G	VISHAY	获取价格	Trans Voltage Suppressor Diode, 400W, 213V V(RWM), Bidirectional, 1 Element, Silicon, DO-2

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