Datasheet > BZW04P213B

BZW04P213B

更新时间： 2024-11-06 06:45:07

品牌	Logo	应用领域
威世 - VISHAY		/
页数	文件大小	规格书
6页	106K
描述
TRANSZORB® Transient Voltage Suppressors

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BZW04P213B 数据手册

BZW04P-5V8 thru BZW04-376

Vishay General Semiconductor

TRANSZORB Transient Voltage Suppressors

FEATURES

• Glass passivated chip junction

• Availablein uni-directionaland bi-directional

• 400 W peak pulse power capability with a

10/1000 µs waveform, repetitive rate (duty

cycle): 0.01 %

• Excellent clamping capability

• Very fast response time

• Low incremental surge resistance

• Solder dip 260 °C, 40 s

DO-204AL (DO-41)

• Component in accordance to RoHS 2002/95/EC

and WEEE 2002/96/EC

TYPICAL APPLICATIONS

PRIMARY CHARACTERISTICS

Use in sensitive electronics protection against voltage

transients induced by inductive load switching and

lighting on ICs, MOSFET, signal lines of sensor

units for consumer, computer, industrial and

telecommunication.

V_WM

5.8 V to 376 V

P_PPM

400 W

1.5 W

40 A

P_D

I_FSM(uni-directional only)

T_Jmax.

175 °C

MECHANICAL DATA

Case: DO-204AL, molded epoxy over passivated chip

Molding compound meets UL 94 V-0 flammability

rating

Base P/N-E3 - RoHS compliant, commercial grade

Base P/NHE3 - RoHS compliant, high reliability/

automotive grade (AEC Q101 qualified)

Terminals: Matte tin plated leads, solderable per

J-STD-002 and JESD22-B102

DEVICES FOR BI-DIRECTION APPLICATIONS

For bi-directional types, use

BZW04P-6V4B).

suffix (e.g.

Electrical characteristics apply in both directions.

E3 suffix meets JESD 201 class 1A whisker test, HE3

suffix meets JESD 201 class 2 whisker test

Note: BZW04-213(B) ~ BZW04-376(B) for commercial grade only

Polarity: For uni-directional types the color band

denotes cathode end, no marking on bi-directional

types

MAXIMUM RATINGS AND THERMAL CHARACTERISTICS (T = 25 °C unless otherwise noted)

PARAMETER

SYMBOL

P_PPM

I_PPM

LIMIT

UNIT

Peak pulse power dissipation with a 10/1000 µs waveform ⁽¹⁾(Fig. 1)

Peak pulse current with a 10/1000 µs waveform ⁽¹⁾

400

See next table

1.5

Power dissipation on infinite heatsink at T_L= 75 °C (Fig. 5)

Peak forward surge current, 8.3 ms single half sine-wave uni-directional only ⁽²⁾

Maximum instantaneous forward voltage at 25 A for uni-directional only ⁽³⁾

Operating junction and storage temperature range

P_D

I_FSM

V_F

3.5/5.0

T_J, T_STG

- 55 to + 175

°C

Notes:

(1) Non-repetitive current pulse, per Fig. 3 and derated above T_A= 25 °C per Fig. 2

(2) Measured on 8.3 ms single half sine-wave or equivalent square wave, duty cycle = 4 pulses per minute maximum

(3) V_F= 3.5 V for BZW04P(-)188 and below; V_F= 5.0 V for BZW04P(-)213 and above

Document Number: 88316

Revision: 22-Oct-08

For technical questions within your region, please contact one of the following:

PDD-Americas@vishay.com, PDD-Asia@vishay.com, PDD-Europe@vishay.com

www.vishay.com

12 3 4 5 6

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与BZW04P213B相关器件

型号	品牌	获取价格	描述	数据表
BZW04P213B/100	VISHAY	获取价格	Trans Voltage Suppressor Diode, 400W, 213V V(RWM), Bidirectional, 1 Element, Silicon, DO-2
BZW04P213B/4E	VISHAY	获取价格	Trans Voltage Suppressor Diode, 400W, 213V V(RWM), Bidirectional, 1 Element, Silicon, DO-2
BZW04P213B/4F	VISHAY	获取价格	Trans Voltage Suppressor Diode, 400W, 213V V(RWM), Bidirectional, 1 Element, Silicon, DO-2
BZW04P213B/4G	VISHAY	获取价格	Trans Voltage Suppressor Diode, 400W, 213V V(RWM), Bidirectional, 1 Element, Silicon, DO-2
BZW04P213B/4H	VISHAY	获取价格	Trans Voltage Suppressor Diode, 400W, 213V V(RWM), Bidirectional, 1 Element, Silicon, DO-2
BZW04P213B/51	VISHAY	获取价格	Trans Voltage Suppressor Diode, 213V V(RWM), Bidirectional,
BZW04P213B/53	VISHAY	获取价格	Trans Voltage Suppressor Diode, 400W, 213V V(RWM), Bidirectional, 1 Element, Silicon, DO-2
BZW04P213B/54	VISHAY	获取价格	Trans Voltage Suppressor Diode, 400W, 213V V(RWM), Bidirectional, 1 Element, Silicon, DO-2
BZW04P213B/56	VISHAY	获取价格	Trans Voltage Suppressor Diode, 400W, 213V V(RWM), Bidirectional, 1 Element, Silicon, DO-2
BZW04P213B/58	VISHAY	获取价格	Trans Voltage Suppressor Diode, 400W, 213V V(RWM), Bidirectional, 1 Element, Silicon, DO-2

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