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BZW04-5V8 PDF预览

BZW04-5V8

更新时间: 2024-02-06 04:32:23
品牌 Logo 应用领域
意法半导体 - STMICROELECTRONICS 瞬态抑制器二极管局域网
页数 文件大小 规格书
7页 88K
描述
TRANSIL

BZW04-5V8 技术参数

是否Rohs认证: 符合生命周期:Obsolete
零件包装代码:DO-15包装说明:PLASTIC PACKAGE-2
针数:2Reach Compliance Code:not_compliant
ECCN代码:EAR99HTS代码:8541.10.00.50
风险等级:5.31其他特性:UL RECOGNIZED
最小击穿电压:6.45 V外壳连接:ISOLATED
最大钳位电压:13.4 V配置:SINGLE
最小二极管电容:3500 pF二极管元件材料:SILICON
二极管类型:TRANS VOLTAGE SUPPRESSOR DIODEJEDEC-95代码:DO-15
JESD-30 代码:O-PALF-W2JESD-609代码:e3
最大非重复峰值反向功率耗散:400 W元件数量:1
端子数量:2最高工作温度:175 °C
封装主体材料:PLASTIC/EPOXY封装形状:ROUND
封装形式:LONG FORM峰值回流温度(摄氏度):NOT SPECIFIED
极性:UNIDIRECTIONAL最大功率耗散:1.7 W
认证状态:Not Qualified最大重复峰值反向电压:5.8 V
最大反向电流:1000 µA子类别:Transient Suppressors
表面贴装:NO技术:AVALANCHE
端子面层:Matte Tin (Sn) - annealed端子形式:WIRE
端子位置:AXIAL处于峰值回流温度下的最长时间:NOT SPECIFIED

BZW04-5V8 数据手册

 浏览型号BZW04-5V8的Datasheet PDF文件第2页浏览型号BZW04-5V8的Datasheet PDF文件第3页浏览型号BZW04-5V8的Datasheet PDF文件第4页浏览型号BZW04-5V8的Datasheet PDF文件第5页浏览型号BZW04-5V8的Datasheet PDF文件第6页浏览型号BZW04-5V8的Datasheet PDF文件第7页 
BZW04-5V8/376  
BZW04-5V8B/376B  
®
TRANSILTM  
FEATURES  
PEAK PULSE POWER : 400 W (10/1000µs)  
STAND-OFF VOLTAGE RANGE :  
From 5.8V to 376 V  
UNI AND BIDIRECTIONAL TYPES  
LOW CLAMPING FACTOR  
FAST RESPONSE TIME  
UL RECOGNIZED  
DESCRIPTION  
Transil diodes provide high overvoltage protection  
by clamping action. Their instantaneous response  
to transient overvoltages makes them particu-  
larly suited to protect voltage sensitive devices  
such as MOS Technology and low voltage sup-  
plied IC’s.  
DO-15  
ABSOLUTE MAXIMUM RATINGS (Tamb = 25°C)  
Symbol  
PPP  
Parameter  
Peak pulse power dissipation (see note 1)  
Power dissipation on infinite heatsink  
Value  
400  
1.7  
Unit  
W
Tj initial = Tamb  
amb = 75°C  
P
T
W
IFSM  
Non repetitive surge peak forward current  
for unidirectional types  
tp = 10ms  
Tj initial = Tamb  
30  
A
Tstg  
Tj  
Storage temperature range  
Maximum junction temperature  
- 65 to + 175  
175  
°C  
°C  
TL  
Maximum lead temperature for soldering during 10s a 5mm  
from case.  
230  
°C  
Note 1 : For a surge greater than the maximum values, the diode will fail in short-circuit.  
THERMAL RESISTANCES  
Symbol  
Rth (j-l)  
Parameter  
Value  
60  
Unit  
°C/W  
°C/W  
Junction to leads  
Junction to ambient on printed circuit.  
Rth (j-a)  
Llead = 10 mm  
100  
February 2003- Ed : 3A  
1/6  

BZW04-5V8 替代型号

型号 品牌 替代类型 描述 数据表
SM6T10A STMICROELECTRONICS

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