BZW04-5V8 thru BZW04-376
www.vishay.com
Vishay General Semiconductor
®
TRANSZORB Transient Voltage Suppressors
FEATURES
• Glass passivated chip junction
• Available in unidirectional and bidirectional
• 400 W peak pulse power capability with a
10/1000 μs waveform, repetitive rate
(duty cycle): 0.01 %
• Excellent clamping capability
• Very fast response time
• Low incremental surge resistance
• Solder dip 275 °C max. 10 s, per JESD 22-B106
• AEC-Q101 qualified
DO-41 (DO-204AL)
• Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912
TYPICAL APPLICATIONS
PRIMARY CHARACTERISTICS
Use in sensitive electronics protection against voltage
transients induced by inductive load switching and lighting
on ICs, MOSFET, signal lines of sensor units for consumer,
computer, industrial, and telecommunication.
VWM
5.8 V to 376 V
V
BR (unidirectional)
6.45 V to 462 V
V
BR (bidirectional)
6.45 V to 462 V
PPPM
PD
400 W
1.5 W
40 A
MECHANICAL DATA
I
FSM (unidirectional only)
Case: DO-41 (DO-204AL), molded epoxy over passivated
chip
TJ max.
175 °C
Polarity
Unidirectional, bidirectional
Molding compound meets UL 94 V-0 flammability rating
Base P/N-E3 - RoHS-compliant, commercial grade
Base P/NHE3 - RoHS-compliant, AEC-Q101 qualified
Package
DO-41 (DO-204AL)
DEVICES FOR BIDIRECTION APPLICATIONS
For bidirectional types, use B suffix (e.g. BZW04P-6V4B).
Electrical characteristics apply in both directions.
Terminals: matte tin plated leads, solderable per
J-STD-002 and JESD22-B102
E3 suffix meets JESD 201 class 1A whisker test, HE3 suffix
meets JESD 201 class 2 whisker test
Note
•
BZW04-213(B) to BZW04-376(B) for commercial grade only
Polarity: for unidirectional types the color band denotes
cathode end, no marking on bidirectional types
MAXIMUM RATINGS AND THERMAL CHARACTERISTICS (TA = 25 °C unles otherwise noted)
PARAMETER
SYMBOL
PPPM
IPPM
LIMIT
UNIT
W
Peak pulse power dissipation with a 10/1000 μs waveform (1) (fig. 1)
Peak pulse current with a 10/1000 μs waveform (1)
400
See next table
1.5
A
Power dissipation on infinite heatsink at TL = 75 °C (fig. 5)
Peak forward surge current, 8.3 ms single half sine-wave unidirectional only (2)
Maximum instantaneous forward voltage at 25 A for unidirectional only (3)
Operating junction and storage temperature range
PD
W
IFSM
40
A
VF
3.5/5.0
-55 to +175
V
TJ, TSTG
°C
Notes
(1)
(2)
(3)
Non-repetitive current pulse, per fig. 3 and derated above TA = 25 °C per fig. 2
Measured on 8.3 ms single half sine-wave or equivalent square wave, duty cycle = 4 pulses per minute maximum
VF = 3.5 V for BZW04P(-)188 and below; VF = 5.0 V for BZW04P(-)213 and above
Revision: 16-Sep-2021
Document Number: 88316
1
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000