Datasheet > BZW04-239B-E3/51

BZW04-239B-E3/51

更新时间： 2024-11-13 03:00:07

品牌	Logo	应用领域
威世 - VISHAY		/
页数	文件大小	规格书
6页	89K
描述
Trans Voltage Suppressor Diode, 400W, 239V V(RWM), Bidirectional, 1 Element, Silicon, DO-204AL, ROHS COMPLIANT, PLASTIC, DO-41, 2 PIN

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BZW04-239B-E3/51 数据手册

BZW04P-5V8 thru BZW04-376

Vishay General Semiconductor

TRANSZORB^®Transient Voltage Suppressors

FEATURES

• Glass passivated chip junction

• Available in Unidirectional and Bidirectional

• 400 W peak pulse power capability with a

10/1000 µs waveform, repetitive rate (duty cycle):

0.01 %

• Excellent clamping capability

• Very fast response time

• Low incremental surge resistance

DO-204AL (DO-41)

• Typical I less than 1 µA above 10 V rating

• Solder Dip 260 °C, 40 seconds

• Component in accordance to RoHS 2002/95/EC

and WEEE 2002/96/EC

TYPICAL APPLICATIONS

MAJOR RATINGS AND CHARACTERISTICS

Use in sensitive electronics protection against voltage

transients induced by inductive load switching and

lighting on ICs, MOSFET, signal lines of sensor

units for consumer, computer, industrial and

telecommunication.

V_WM

5.8 V to 376 V

P_PPM

400 W

P_D

1.0 W

I_FSM(Unidirectional only)

T_jmax.

40 A

175 °C

MECHANICAL DATA

Case: DO-204AL, molded epoxy over passivated chip

Epoxy meets UL 94V-0 flammability rating

DEVICES FOR BIDIRECTION APPLICATIONS

For bidirectional types, use B suffix (e.g. BZW04P-6V4B).

Electrical characteristics apply in both directions.

Terminals: Matte tin plated leads, solderable per

J-STD-002B and JESD22-B102D

E3 suffix for commercial grade, HE3 suffix for high

reliability grade (AEC Q101 qualified)

Polarity: For unidirectional types the color band

denotes cathode end, no marking on bidirectional

types

MAXIMUM RATINGS AND THERMAL CHARACTERISTICS (T = 25 °C unless otherwise noted)

PARAMETER

SYMBOL

P_PPM

I_PPM

LIMIT

Minimum 400

see next table

1.0

UNIT

Peak pulse power dissipation with a 10/1000 µs waveform ⁽¹⁾(Fig. 1)

Peak pulse current with a 10/1000 µs waveform ⁽¹⁾

Power dissipation on infinite heatsink at T_L= 75 °C (Fig. 5)

Peak forward surge current, 8.3 ms single half sine-wave unidirectional only ⁽²⁾

Maximum instantaneous forward voltage at 25 A for unidirectional only ⁽³⁾

Operating junction and storage temperature range

P_D

I_FSM

V_F

3.5/5.0

T_J, T_STG

- 55 to + 175

°C

Note:

(1) Non-repetitive current pulse, per Fig. 3 and derated above T_A= 25 °C per Fig. 2

(2) Measured on 8.3 ms single half sine-wave or equivalent square wave, duty cycle = 4 pulses per minute maximum

(3) V_F= 3.5 V for BZW04P(-)188 & below; V_F= 5.0 V for BZW04P(-)213 & above

Document Number 88316

07-Jun-06

www.vishay.com

12 3 4 5 6

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与BZW04-239B-E3/51相关器件

型号	品牌	获取价格	描述	数据表
BZW04-239B-E3/54	VISHAY	获取价格	Trans Voltage Suppressor Diode, 400W, 239V V(RWM), Bidirectional, 1 Element, Silicon, DO-2
BZW04-239B-E3/73	VISHAY	获取价格	TVS DIODE 239V 384V DO204AL
BZW04-239BHE3/54	VISHAY	获取价格	Trans Voltage Suppressor Diode, 400W, 239V V(RWM), Bidirectional, 1 Element, Silicon, DO-2
BZW04-239B-HE3/54	VISHAY	获取价格	DIODE 400 W, BIDIRECTIONAL, SILICON, TVS DIODE, DO-204AL, ROHS COMPLIANT, PLASTIC, DO-41,
BZW04-239BRL	STMICROELECTRONICS	获取价格	400W, BIDIRECTIONAL, SILICON, TVS DIODE, PLASTIC, F126, 2 PIN
BZW04-239-E3/4	VISHAY	获取价格	Trans Voltage Suppressor Diode, 400W, 239V V(RWM), Unidirectional, 1 Element, Silicon, DO-
BZW04-239-E3/51	VISHAY	获取价格	Trans Voltage Suppressor Diode, 400W, 239V V(RWM), Unidirectional, 1 Element, Silicon, DO-
BZW04-239-E3/54	VISHAY	获取价格	Trans Voltage Suppressor Diode, 400W, 239V V(RWM), Unidirectional, 1 Element, Silicon, DO-
BZW04-239-E3/73	VISHAY	获取价格	TVS DIODE 239V 384V DO204AL
BZW04-239-HE3/54	VISHAY	获取价格	DIODE 400 W, UNIDIRECTIONAL, SILICON, TVS DIODE, DO-204AL, ROHS COMPLIANT, PLASTIC, DO-41,

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