BZW03C150-TAP

更新时间： 2024-12-01 13:06:03

品牌	Logo	应用领域
威世 - VISHAY		二极管齐纳二极管局域网
页数	文件大小	规格书
6页	123K
描述
Zener Diode, 150V V(Z), 8%, 1.85W,

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中文翻译

获取价格

数据手册

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BZW03C150-TAP 数据手册

BZW03-Series

Vishay Semiconductors

Zener Diodes with Surge Current Specification

Features

• Glass passivated junction

• Hermetically sealed package

• Clamping time in picoseconds

• Lead (Pb)-free component

949588

• Component in accordance to RoHS 2002/95/EC

and WEEE 2002/96/EC

Applications

Voltage regulators and transient suppression circuits

Mechanical Data

Case: SOD-64 Sintered glass case

Weight: approx. 858 mg

Packaging Codes/Options:

TAP / 2.5 k Ammopack (52 mm tape), 12.5 k/box

TR / 2.5 k 10 " reel

Absolute Maximum Ratings

T_amb= 25 °C, unless otherwise specified

Parameter

Power dissipation

Test condition

Symbol

P_diss

Value

Unit

l = 10 mm, T_L= 25 °C

6.0

1.85

_amb= 45 °C

P_diss

Repetitive peak reverse power

dissipation

P_ZRM

Non repetitive peak surge power t_p= 100 µs, T_j= 25 °C

P_ZSM

1000

dissipation

Junction temperature

T_j

175

°C

Storage temperature range

T_stg

- 65 to + 175

Thermal Characteristics

T_amb= 25 °C, unless otherwise specified

Parameter

Test condition

l = 25 mm, T_L= constant

on PC board with spacing 37.5 mm

Symbol

R_thJA

Value

Unit

Junction ambient

K/W

R_thJA

Electrical Characteristics

T_amb= 25 °C, unless otherwise specified

Parameter

Test condition

Symbol

V_F

Min

Typ.

Max

1.2

Unit

Forward voltage

I_F= 1 A

Document Number 85602

Rev. 1.4, 13-Apr-05

www.vishay.com

12 3 4 5 6

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