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BZW03C15-TR PDF预览

BZW03C15-TR

更新时间: 2024-12-01 13:06:07
品牌 Logo 应用领域
威世 - VISHAY 二极管局域网
页数 文件大小 规格书
6页 50K
描述
Trans Voltage Suppressor Diode, 1000W, Unidirectional, 1 Element, Silicon, GLASS, SOD-64, 2 PIN

BZW03C15-TR 技术参数

是否无铅:不含铅生命周期:Obsolete
零件包装代码:SOD包装说明:O-LALF-W2
针数:2Reach Compliance Code:unknown
ECCN代码:EAR99HTS代码:8541.10.00.50
风险等级:5.78Is Samacsys:N
最小击穿电压:20.9 V外壳连接:ISOLATED
配置:SINGLE二极管元件材料:SILICON
二极管类型:TRANS VOLTAGE SUPPRESSOR DIODEJESD-30 代码:O-LALF-W2
最大非重复峰值反向功率耗散:1000 W元件数量:1
端子数量:2封装主体材料:GLASS
封装形状:ROUND封装形式:LONG FORM
极性:UNIDIRECTIONAL最大功率耗散:1.85 W
认证状态:Not Qualified表面贴装:NO
技术:AVALANCHE端子形式:WIRE
端子位置:AXIALBase Number Matches:1

BZW03C15-TR 数据手册

 浏览型号BZW03C15-TR的Datasheet PDF文件第2页浏览型号BZW03C15-TR的Datasheet PDF文件第3页浏览型号BZW03C15-TR的Datasheet PDF文件第4页浏览型号BZW03C15-TR的Datasheet PDF文件第5页浏览型号BZW03C15-TR的Datasheet PDF文件第6页 
BZW03C...  
Vishay Telefunken  
Silicon Z–Diodes and Transient Voltage Suppressors  
Features  
Glass passivated junction  
Hermetically sealed package  
Clamping time in picoseconds  
Applications  
94 9588  
Voltage regulators and transient suppression circuits  
Absolute Maximum Ratings  
T = 25 C  
j
Parameter  
Power dissipation  
Test Conditions  
l=10mm, T =25 C  
Type Symbol  
Value  
6.0  
1.85  
20  
1000  
175  
Unit  
W
W
W
W
C
P
V
P
V
L
T =45 C  
amb  
Repetitive peak reverse power dissipation  
Non repetitive peak surge power dissipation t =100 s, T =25 C  
Junction temperature  
P
ZRM  
P
ZSM  
p
j
T
j
Storage temperature range  
T
stg  
–65...+175  
C
Maximum Thermal Resistance  
T = 25 C  
j
Parameter  
Junction ambient l=25mm, T =constant  
Test Conditions  
Symbol  
Value  
30  
70  
Unit  
K/W  
K/W  
R
thJA  
R
thJA  
L
on PC board with spacing 37.5mm  
Electrical Characteristics  
T = 25 C  
j
Parameter  
Forward voltage  
Test Conditions  
Type  
Symbol Min  
Typ Max Unit  
1.2  
I =1A  
F
V
F
V
Document Number 85602  
Rev. 2, 01-Apr-99  
www.vishay.de FaxBack +1-408-970-5600  
1 (5)  

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