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BZV55-B4V7 PDF预览

BZV55-B4V7

更新时间: 2024-01-14 21:18:48
品牌 Logo 应用领域
威世 - VISHAY 二极管齐纳二极管测试
页数 文件大小 规格书
7页 298K
描述
ZENER DIODES

BZV55-B4V7 技术参数

是否Rohs认证: 符合生命周期:Obsolete
包装说明:O-LELF-R2针数:2
Reach Compliance Code:compliantECCN代码:EAR99
HTS代码:8541.10.00.50风险等级:5.82
外壳连接:ISOLATED配置:SINGLE
二极管元件材料:SILICON二极管类型:ZENER DIODE
最大动态阻抗:80 ΩJESD-30 代码:O-LELF-R2
JESD-609代码:e3湿度敏感等级:1
元件数量:1端子数量:2
最高工作温度:200 °C最低工作温度:-65 °C
封装主体材料:GLASS封装形状:ROUND
封装形式:LONG FORM峰值回流温度(摄氏度):NOT SPECIFIED
极性:UNIDIRECTIONAL最大功率耗散:0.4 W
认证状态:Not Qualified标称参考电压:4.7 V
最大反向电流:3 µA子类别:Voltage Reference Diodes
表面贴装:YES技术:ZENER
端子面层:Tin (Sn)端子形式:WRAP AROUND
端子位置:END处于峰值回流温度下的最长时间:NOT SPECIFIED
电压温度Coeff-Max:0.2 mV/ °C最大电压容差:2%
工作测试电流:5 mA

BZV55-B4V7 数据手册

 浏览型号BZV55-B4V7的Datasheet PDF文件第2页浏览型号BZV55-B4V7的Datasheet PDF文件第3页浏览型号BZV55-B4V7的Datasheet PDF文件第4页浏览型号BZV55-B4V7的Datasheet PDF文件第5页浏览型号BZV55-B4V7的Datasheet PDF文件第6页浏览型号BZV55-B4V7的Datasheet PDF文件第7页 
NEW PRODUCT  
NEW PRODUCT  
NEW PRODUCT  
BZV55 SERIES  
ZENER DIODES  
Mini-MELF  
FEATURES  
Silicon Planar Power Zener Diodes  
For use as low voltage stabilizer or  
Cathode Mark  
voltage reference.  
The Zener voltages are graded according to the  
international E 24 standard. Higher Zener voltages  
and 1% tolerance available on request.  
.019 (0.48)  
.011 (0.28)  
.142 (3.6)  
.134 (3.4)  
Diodes available in these tolerance series:  
±2% BZV55-B, ±3% BZV55-F, ±5% BZV55-C.  
MECHANICAL DATA  
Case: Mini-MELF Glass Case (SOD-80)  
Weight: approx. 0.05 g  
Cathode band color: Blue  
Dimensions are in inches and (millimeters)  
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS  
Ratings at 25°C ambient temperature unless otherwise specified.  
SYMBOL  
VALUE  
UNIT  
Zener Current see Table “Characteristics”  
Power Dissipation at Tflange = 50°C  
Power Dissipation at TA = 50°C  
Ptot  
Ptot  
Tj  
500  
mW  
mW  
°C  
(1)  
400  
Junction Temperature  
–65 to +200  
–65 to +200  
250  
Storage Temperature Range  
TS  
°C  
Continuous Forward Current  
IF  
mA  
W
(2)  
Peak reverse power disipation (non-repetitive) tp=100µs  
PZSM  
30  
SYMBOL  
RthJA  
RthJL  
VF  
MIN.  
TYP.  
MAX.  
UNIT  
K/mW  
K/mW  
V
(1)  
Thermal Resistance Junction to Ambient Air  
Thermal Resistance Junction to Lead  
Forward Voltage at IF = 10 mA  
0.38  
0.30  
0.9  
NOTES:  
1) Mounted on ceramic substrate 10mm x 10mm x 0.6mm  
2) Tj = 150°C  
9/29/98  

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