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BZV55-B4V7T/R PDF预览

BZV55-B4V7T/R

更新时间: 2024-01-08 18:26:20
品牌 Logo 应用领域
恩智浦 - NXP 测试二极管齐纳二极管
页数 文件大小 规格书
13页 410K
描述
DIODE 4.7 V, 0.4 W, SILICON, UNIDIRECTIONAL VOLTAGE REGULATOR DIODE, HERMETIC SEALED, GLASS PACKAGE-2, Voltage Regulator Diode

BZV55-B4V7T/R 技术参数

是否Rohs认证: 符合生命周期:Obsolete
包装说明:O-LELF-R2针数:2
Reach Compliance Code:compliantECCN代码:EAR99
HTS代码:8541.10.00.50风险等级:5.82
外壳连接:ISOLATED配置:SINGLE
二极管元件材料:SILICON二极管类型:ZENER DIODE
最大动态阻抗:80 ΩJESD-30 代码:O-LELF-R2
JESD-609代码:e3湿度敏感等级:1
元件数量:1端子数量:2
最高工作温度:200 °C最低工作温度:-65 °C
封装主体材料:GLASS封装形状:ROUND
封装形式:LONG FORM峰值回流温度(摄氏度):NOT SPECIFIED
极性:UNIDIRECTIONAL最大功率耗散:0.4 W
认证状态:Not Qualified标称参考电压:4.7 V
最大反向电流:3 µA子类别:Voltage Reference Diodes
表面贴装:YES技术:ZENER
端子面层:Tin (Sn)端子形式:WRAP AROUND
端子位置:END处于峰值回流温度下的最长时间:NOT SPECIFIED
电压温度Coeff-Max:0.2 mV/ °C最大电压容差:2%
工作测试电流:5 mA

BZV55-B4V7T/R 数据手册

 浏览型号BZV55-B4V7T/R的Datasheet PDF文件第2页浏览型号BZV55-B4V7T/R的Datasheet PDF文件第3页浏览型号BZV55-B4V7T/R的Datasheet PDF文件第4页浏览型号BZV55-B4V7T/R的Datasheet PDF文件第5页浏览型号BZV55-B4V7T/R的Datasheet PDF文件第6页浏览型号BZV55-B4V7T/R的Datasheet PDF文件第7页 
BZV55 series  
Voltage regulator diodes  
Rev. 5 — 26 January 2011  
Product data sheet  
1. Product profile  
1.1 General description  
Low-power voltage regulator diodes in small hermetically sealed glass SOD80C  
Surface-Mounted Device (SMD) packages. The diodes are available in the normalized  
E24 2 % (BZV55-B) and approximately 5 % (BZV55-C) tolerance range.  
The series consists of 37 types with nominal working voltages from 2.4 V to 75 V.  
1.2 Features and benefits  
Non-repetitive peak reverse power  
dissipation: 40 W  
Wide working voltage range:  
nominal 2.4 V to 75 V (E24 range)  
Total power dissipation: 500 mW  
Two tolerance series: 2 % and 5 %  
Low differential resistance  
Small hermetically sealed glass  
SMD package  
1.3 Applications  
General regulation functions  
1.4 Quick reference data  
Table 1.  
Quick reference data  
Symbol Parameter  
Conditions  
Min  
Typ  
Max  
0.9  
40  
Unit  
V
VF  
forward voltage  
IF = 10 mA  
-
-
-
-
[1]  
PZSM  
non-repetitive peak  
W
reverse power dissipation  
[1] tp = 100 s; square wave; Tj = 25 C prior to surge  
2. Pinning information  
Table 2.  
Pinning  
Pin  
1
Description  
cathode  
Simplified outline  
Graphic symbol  
[1]  
k
a
2
anode  
2
1
006aaa152  
[1] The marking band indicates the cathode.  

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