Datasheet > BZT55C6V213

BZT55C6V213

更新时间： 2024-10-31 03:34:31

品牌	Logo	应用领域
美台 - DIODES		/
页数	文件大小	规格书
3页	69K
描述
Zener Diode, 6.2V V(Z), 6.45%, 0.5W, Silicon, Unidirectional, HERMETIC SEALED, GLASS, QUADROMELF-2

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BZT55C6V213 数据手册

BZT55C2V4 - BZT55C75

500mW SURFACE MOUNT ZENER DIODE

Features

500mW Power Dissipation

High Stability

Low Noise

Outline Similar to JEDEC 213AA

Hemetic Package

Mechanical Data

Case: QuadroMELF, Glass

Terminals: Solderable per MIL-STD-202,

Method 208

Polarity: Cathode Band

Marking: Cathode Band Only

Weight: 0.034 grams (approx.)

QuadroMELF

Dim

Min

3.3

1.4

Max

3.7

1.6

1.7Æ Typical

0.3 Typical

All Dimensions in mm

@ T_A= 25°C unless otherwise specified

Maximum Ratings and Electrical Characteristics

Characteristic

Symbol

P_d

Value

500

Unit

K/W

Power Dissipation

Zener Current

(Note 1)

I_Z

P_d/V_Z

300

R_qJA

V_F

Thermal Resistance, Junction to Ambient Air

Forward Voltage

@ I_F= 200mA

1.5

T_j,T_STG

-65 to +175

°C

Operating and Storage Temperature Range

Notes:

1. Valid provided that electrodes are kept at ambient temperature.

2. Tested with pulses, T_p£ 100ms.

DS30006 Rev. C-2

1 of 3

BZT55C2V4-BZT55C75

12 3

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