Datasheet > BZT52H-B6V8,135

BZT52H-B6V8,135

更新时间： 2024-11-15 03:12:27

品牌	Logo	应用领域
恩智浦 - NXP		测试光电二极管
页数	文件大小	规格书
13页	118K
描述
6.8V, 0.375W, SILICON, UNIDIRECTIONAL VOLTAGE REGULATOR DIODE, PLASTIC PACKAGE-2

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BZT52H-B6V8,135 数据手册

BZT52H series

Single Zener diodes in a SOD123F package

Rev. 3 — 7 December 2010

Product data sheet

1. Product profile

1.1 General description

General-purpose Zener diodes in a SOD123F small and flat lead Surface-Mounted

Device (SMD) plastic package.

1.2 Features and benefits

Total power dissipation: ≤ 830 mW

Wide working voltage range: nominal

Low differential resistance

AEC-Q101 qualified

2.4 V to 75 V (E24 range)

Small plastic package suitable for

surface-mounted design

1.3 Applications

General regulation functions

1.4 Quick reference data

Table 1.

Quick reference data

Symbol Parameter

Conditions

I_F= 10 mA

T_amb≤ 25 °C

Min

Typ

Max

0.9

Unit

[1]

[2]

[3]

V_F

forward voltage

total power dissipation

P_tot

375

830

[1] Pulse test: t_p≤ 300 μs; δ ≤ 0.02.

[2] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and standard

footprint.

[3] Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for cathode 1 cm².

2. Pinning information

Table 2.

Pinning

Description

cathode

Simplified outline

Graphic symbol

[1]

anode

006aaa152

[1] The marking bar indicates the cathode.

12 3 4 5 6 7...13

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