Datasheet > BZT52C6V8

BZT52C6V8

更新时间： 2024-11-13 12:48:03

品牌	Logo	应用领域
永而佳 - WINNERJOIN		/
页数	文件大小	规格书
3页	238K
描述
Planar Die Construction

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中文翻译

获取价格

数据手册

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BZT52C6V8 数据手册

RoHS

BZT52C2V4-43

SOD-123

BZT52C2V4-BZT52C43 ^{ZENER DIODE}

FEATURES：

Planar Die Construction

500mW Power Dissipation on Ceramic PCB

General Purpose, Medium Current

Ideally Suited for Automated Assembly Processes

Available in Lead Free Version

Maximum Ratings @Ta=25℃ unless otherwise specified

Characteristic

Forward Voltage (Note 2) @ I_F= 10mA

Power Dissipation(Note 1)

Symbol

V_F

Value

0.9

Unit

P_D

350

℃/W

Thermal Resistance, Junction to Ambient Air

R_θJA

357

Operating and Storage Temperature Range

T_j,T_STG

-65 to +150

℃

Notes: 1. Device mounted on ceramic PCB: 7.6mm x 9.4mm x 0.87mm with pad areas 25mm².

2. Short duration test pulse used to minimize self-heating effect.

3. f = 1KH_Z

WEJ ELECTRONIC CO.,LTD

Http:// www.wej.cn

E-mail:wej@yongerjia.com

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中文翻译

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