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BZT52B3V9 PDF预览

BZT52B3V9

更新时间: 2024-12-01 06:44:59
品牌 Logo 应用领域
TSC 稳压二极管
页数 文件大小 规格书
3页 119K
描述
500mW, 2% Tolerance SMD Zener Diode

BZT52B3V9 技术参数

是否Rohs认证: 符合生命周期:Active
包装说明:R-PDSO-F2Reach Compliance Code:compliant
风险等级:5.19Is Samacsys:N
配置:SINGLE二极管元件材料:SILICON
二极管类型:ZENER DIODEJESD-30 代码:R-PDSO-F2
JESD-609代码:e3湿度敏感等级:1
元件数量:1端子数量:2
最高工作温度:150 °C最低工作温度:-65 °C
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:SMALL OUTLINE峰值回流温度(摄氏度):260
极性:UNIDIRECTIONAL最大功率耗散:0.5 W
标称参考电压:3.9 V表面贴装:YES
技术:ZENER端子面层:Matte Tin (Sn)
端子形式:FLAT端子位置:DUAL
处于峰值回流温度下的最长时间:30最大电压容差:2%
工作测试电流:5 mABase Number Matches:1

BZT52B3V9 数据手册

 浏览型号BZT52B3V9的Datasheet PDF文件第2页浏览型号BZT52B3V9的Datasheet PDF文件第3页 
BZT52B2V4-BZT52B75  
500mW, 2% Tolerance SMD Zener Diode  
Small Signal Diode  
SOD-123F  
B
C
A
Features  
—Wide zener voltage range selection : 2.4V to 75V  
—VZ Tolerance Selection of ±2%  
D
—Moisture sensitivity level 1  
—Matte Tin(Sn) lead finish with Nickel(Ni) underplate  
—Pb free version and RoHS compliant  
E
F
—Green compound (Halogen free) with suffix "G" on  
packing code and prefix "G" on date code  
Unit (mm)  
Unit (inch)  
Min Max  
Dimensions  
Min  
1.5  
Max  
Mechanical Data  
—Case : Flat lead SOD-123 small outline plastic package  
A
B
C
D
E
F
1.7 0.059 0.067  
3.7 0.130 0.146  
0.7 0.020 0.028  
2.7 0.098 0.106  
3.3  
—Terminal: Matte tin plated, lead free., solderable  
per MIL-STD-202, Method 208 guaranteed  
0.5  
—High temperature soldering guaranteed: 260 °C/10s  
—Polarity : Indicated by cathode band  
—Weight : 8.85±0.5 mg  
2.5  
0.8  
1.0  
0.031 0.039  
0.05  
0.2 0.002 0.008  
Ordering Information  
Part No.  
Packing  
Package  
BZT52Bxx RH  
3Kpcs / 7" Reel  
SOD-123F  
Maximum Ratings and Electrical Characteristics  
Rating at 25°C ambient temperature unless otherwise specified.  
Maximum Ratings  
Type Number  
Symbol  
PD  
Value  
Units  
mW  
V
Power Dissipation  
500  
Forward Voltage  
VF  
1
IF=10mA  
(Note 1)  
Thermal Resistance (Junction to Ambient)  
Junction and Storage Temperature Range  
RθJA  
TJ, TSTG  
350  
°C/W  
°C  
-65 to + 150  
Notes:1. Valid provided that electrodes are kept at ambient temperature  
Zener I vs. V Characteristics  
Curren  
IF  
V
ZM  
V
Z
V
BR  
V
R
Voltage  
V
F
I
I
R
ZK  
VBR  
IZK  
: Voltage at IZK  
: Test current for voltage VBR  
: Dynamic impedance at IZK  
: Test current for voltage VZ  
: Voltage at current IZT  
ZZK  
IZT  
IZT  
VZ  
IZM  
ZZT  
IZM  
VZM  
: Dynamic impedance at IZT  
: Maximum steady state current  
: Voltage at IZM  
BreakdownRegion Leakage Region  
Forward Region  
Version : C09  

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