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BZT52-C3V9D3 PDF预览

BZT52-C3V9D3

更新时间: 2024-11-27 03:40:19
品牌 Logo 应用领域
威世 - VISHAY 测试光电二极管
页数 文件大小 规格书
9页 398K
描述
DIODE 3.9 V, 0.41 W, SILICON, UNIDIRECTIONAL VOLTAGE REGULATOR DIODE, PLASTIC, SO-2, Voltage Regulator Diode

BZT52-C3V9D3 技术参数

是否无铅: 不含铅是否Rohs认证: 符合
生命周期:Active零件包装代码:SOD
包装说明:R-PDSO-G2针数:2
Reach Compliance Code:unknown风险等级:5.69
配置:SINGLE二极管元件材料:SILICON
二极管类型:ZENER DIODEJESD-30 代码:R-PDSO-G2
JESD-609代码:e3湿度敏感等级:1
元件数量:1端子数量:2
最高工作温度:150 °C封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:SMALL OUTLINE
峰值回流温度(摄氏度):260极性:UNIDIRECTIONAL
最大功率耗散:0.41 W认证状态:Not Qualified
标称参考电压:3.9 V表面贴装:YES
技术:ZENER端子面层:MATTE TIN
端子形式:GULL WING端子位置:DUAL
处于峰值回流温度下的最长时间:40最大电压容差:5%
工作测试电流:5 mABase Number Matches:1

BZT52-C3V9D3 数据手册

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BZT52 Series  
Zener Diodes  
VZ Range 2.4 to 75  
Power Dissipation 410mW  
SOD-123  
Mounting Pad Layout  
.022 (0.55)  
Cathode Band  
0.055 (1.40)  
0.094 (2.40)  
Top View  
)
5)  
)
5)  
Dimensions in inches  
and (millimeters)  
(
140(3.  
2
10(2.  
.
.
.
.
53)  
.
x
.067 (1.70)  
.055 (1.40)  
Features  
am  
51)  
• Silicon Planar Power Zener Diodes  
.
x
503(1.  
.
• The Zener voltages are graded according to the  
international E 24 standard. Standard Zener volt-  
age tolerance is ±5%. Replace suffix “C” with “B”  
for ±2% tolerance. Other tolerances and other  
Zener voltages are available upon request.  
amx.  
am  
6(0.  
• These diodes are also available in other case  
styles and other configurations including: the  
SOT-23 case with type designation BZX84 series,  
the dual zener diode common anode configuration  
in the SOT-23 case with type  
Mechanical Data  
Case: SOD-123 Plastic Case  
Weight: approx. 0.01g  
designation AZ23 series and the dual zener diode  
common cathode configuration in the SOT-23  
case with type designation DZ23 series.  
Packaging Codes/Options:  
D3 / 10K per 13reel (8mm tape)  
D4 / 3K per 7reel (8mm tape)  
Maximum Ratings and Thermal Characteristics(TA = 25°C unless otherwise noted)  
Parameter  
Symbol  
Value  
Unit  
Zener Current (see Table “Characteristics”)  
Power Dissipation at Tamb = 25°C  
Ptot  
410(1)  
300(2)  
mW  
Thermal Resistance  
Junction to Ambient Air  
RΘJA  
°C/W  
Junction Temperature  
Tj  
150  
°C  
°C  
Storage Temperature Range  
TS  
–65 to +150  
Notes:  
(1) Diode on Ceramic Substrate 0.7mm; 2.5mm2 area  
(2) Valid provided that electrodes are kept at ambient temperature  
6/5/01  

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