Datasheet > BZT52C3V9-GS08

BZT52C3V9-GS08

更新时间： 2024-11-24 03:18:11

品牌	Logo	应用领域
威世 - VISHAY		/
页数	文件大小	规格书
9页	232K
描述
Zener Diode, 3.9V V(Z), 5.13%, 0.41W, Silicon, Unidirectional, PLASTIC PACKAGE-2

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BZT52C3V9-GS08 数据手册

BZT52-Series

Vishay Semiconductors

Small Signal Zener Diodes

Features

• Silicon Planar Power Zener Diodes

• These diodes are also available in other case

styles and other configurations including: the

SOT-23 case with type designation BZX84 series,

the dual zener diode common anode configuration

in the SOT-23 case with type designation AZ23

series and the dual zener diode common cathode

configuration in the SOT-23 case with type desig-

nation DZ23 series.

17431

• The Zener voltages are graded according to the

international E 24 standard.

Mechanical Data

Case: SOD-123 Plastic case

Weight: approx. 9.3 mg

Packaging Codes/Options:

GS18 / 10 k per 13 " reel (8 mm tape), 10 k/box

GS08 / 3 k per 7 " reel (8 mm tape), 15 k/box

Absolute Maximum Ratings

= 25 °C, unless otherwise specified

Parameter

amb

Test condition

Symbol

Value

Unit

Zener current see table "

Characteristics "

Power dissipation

tot

500

410

Diode on ceramic substrate 0.7 mm; 2.5 mm pad areas

Diode on ceramic substrate 0.7 mm; 5 mm pad areas

Thermal Characteristics

= 25 °C, unless otherwise specified

amb

Parameter

Test condition

Symbol

Value

Unit

Thermal resistance junction to

ambient air

°C/W

thJA

300

Junction temperature

150

°C

Storage temperature range

- 65 to + 150

Valid provided that electrodes are kept at ambient temperature

Document Number 85760

Rev. 1.5, 13-Sep-04

www.vishay.com

12 3 4 5 6 7...9

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