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BZT52-C2V4S PDF预览

BZT52-C2V4S

更新时间: 2024-11-12 22:56:39
品牌 Logo 应用领域
美丽微 - FORMOSA 稳压二极管测试光电二极管
页数 文件大小 规格书
4页 113K
描述
SURFACE MOUNT SILICON ZENER DIODES

BZT52-C2V4S 数据手册

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DATA SHEET  
BZT52-C2V4S SERIES  
SURFACE MOUNT SILICON ZENER DIODES  
Unit: inch (mm)  
SOD-323  
200 mWatts  
POWER  
VOLTAGE  
2.4 to 39 Volts  
FEATURES  
• Planar Die construction  
.078(1.95)  
.068(1.75)  
• 200mW Power Dissipation  
• Zener Voltages from 2.4~39V  
• Ideally Suited for Automated Assembly Processes  
• Both normal and Pb free product are available :  
Normal : 80~95% Sn, 5~20% Pb  
.038(.95)  
.027(.70)  
Pb free: 98.5% Sn above  
.107(2.7)  
.090(2.3)  
MECHANICALDATA  
.012(.30)MIN.  
• Case: SOD-323, Molded Plastic  
• Terminals: Solderable per MIL-STD-202, Method 208  
• Polarity: See Diagram Below  
• Approx. Weight: 0.008 grams  
• Mounting Position: Any  
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS  
Parameter  
Maximum Forward Voltage Drop at IF=10mA  
Maximum Power Dissipation (Notes A) at 25OC  
Symbol  
Value  
0.9  
Units  
V
V
F
200  
mW  
Amps  
OC  
P
D
Peak Forward Surge Current, 8.3ms single half  
sine-wave superimposed on rated load (JEDEC method) (Notes B)  
2.0  
IFSM  
Operating Junction and StorageTemperature Range  
-55 to +150  
TJ  
NOTES:  
A. Mounted on 5.0mm2(.013mm thick) land areas.  
B. Measured on 8.3ms, single half sine-wave or equivalent square wave, duty cycle = 4 pulses per minute maximum.  

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