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BZT52-C17 PDF预览

BZT52-C17

更新时间: 2024-12-01 04:50:31
品牌 Logo 应用领域
强茂 - PANJIT 稳压二极管光电二极管
页数 文件大小 规格书
5页 110K
描述
SURFACE MOUNT SILICON ZENER DIODES

BZT52-C17 技术参数

是否无铅: 不含铅是否Rohs认证: 符合
生命周期:Active包装说明:R-PDSO-G2
针数:2Reach Compliance Code:compliant
ECCN代码:EAR99HTS代码:8541.10.00.50
风险等级:5.76Is Samacsys:N
配置:SINGLE二极管元件材料:SILICON
二极管类型:ZENER DIODEJESD-30 代码:R-PDSO-G2
元件数量:1端子数量:2
最高工作温度:150 °C最低工作温度:-55 °C
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:SMALL OUTLINE峰值回流温度(摄氏度):NOT SPECIFIED
极性:UNIDIRECTIONAL最大功率耗散:0.41 W
标称参考电压:17 V表面贴装:YES
技术:ZENER端子形式:GULL WING
端子位置:DUAL处于峰值回流温度下的最长时间:NOT SPECIFIED
最大电压容差:5%Base Number Matches:1

BZT52-C17 数据手册

 浏览型号BZT52-C17的Datasheet PDF文件第2页浏览型号BZT52-C17的Datasheet PDF文件第3页浏览型号BZT52-C17的Datasheet PDF文件第4页浏览型号BZT52-C17的Datasheet PDF文件第5页 
BZT52-C2V4 SERIES  
SURFACE MOUNT SILICON ZENER DIODES  
Unit: inch (mm)  
SOD-123  
500 mWatts  
POWER  
VOLTAGE  
2.4 to 75 Volts  
FEATURES  
.154(3.90)  
.141(3.60)  
• Planar Die construction  
.110(2.8)  
.098(2.5)  
• 500mW Power Dissipation  
• Zener Voltages from 2.4~75V  
• Ideally Suited for Automated Assembly Processes  
• Pb free product : 99% Sn above can meet RoHS  
environment substance diective request  
MECHANICALDATA  
• Case: SOD-123, Molded Plastic  
• Terminals: Solderable per MIL-STD-750, Method 2026  
• Polarity: See Diagram Below  
.016(.40)MIN  
.005(.12)MAX  
• Approx. Weight: 0.01 grams  
• Mounting Position: Any  
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS  
Parameter  
Maximum Forward Voltage Drop at IF=100mA  
Maximum Power Dissipation (Notes A) at 25OC  
Symbol  
Value  
Units  
V
V
F
1.0  
500  
mW  
Amps  
OC  
P
D
Peak Forward Surge Current, 8.3ms single half  
sine-wave superimposed on rated load (JEDEC method) (Notes B)  
4.0  
IFSM  
Operating Junction and StorageTemperature Range  
-50 to +150  
TJ  
NOTES:  
A. Mounted on 5.0mm2(.013mm thick) land areas.  
B. Measured on 8.3ms, single half sine-wave or equivalent square wave, duty cycle = 4 pulses per minute maximum.  
V010-DEC.29.2005  
PAGE . 1  

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