生命周期: | Obsolete | 包装说明: | E-LALF-W2 |
针数: | 2 | Reach Compliance Code: | unknown |
ECCN代码: | EAR99 | HTS代码: | 8541.10.00.50 |
风险等级: | 5.8 | Is Samacsys: | N |
最小击穿电压: | 370 V | 外壳连接: | ISOLATED |
最大钳位电压: | 537 V | 配置: | SINGLE |
二极管元件材料: | SILICON | 二极管类型: | TRANS VOLTAGE SUPPRESSOR DIODE |
JESD-30 代码: | E-LALF-W2 | 最大非重复峰值反向功率耗散: | 300 W |
元件数量: | 1 | 端子数量: | 2 |
最高工作温度: | 175 °C | 封装主体材料: | GLASS |
封装形状: | ELLIPTICAL | 封装形式: | LONG FORM |
极性: | UNIDIRECTIONAL | 最大功率耗散: | 1.3 W |
认证状态: | Not Qualified | 最大反向电流: | 5 µA |
表面贴装: | NO | 技术: | ZENER |
端子形式: | WIRE | 端子位置: | AXIAL |
Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
BZT03C390T/R | PHILIPS |
获取价格 |
Trans Voltage Suppressor Diode, 390V V(RWM), Unidirectional, | |
BZT03-C390T/R | NXP |
获取价格 |
DIODE 300 W, UNIDIRECTIONAL, SILICON, TVS DIODE, HERMETIC SEALED, GLASS PACKAGE-2, Transie | |
BZT03C39AMO | PHILIPS |
获取价格 |
Zener Diode, 39V V(Z), 5%, 3.25W, | |
BZT03-C39AMO | NXP |
获取价格 |
DIODE 300 W, UNIDIRECTIONAL, SILICON, TVS DIODE, HERMETIC SEALED, GLASS PACKAGE-2, Transie | |
BZT03C39T/R | PHILIPS |
获取价格 |
Zener Diode, 39V V(Z), 5%, 3.25W, | |
BZT03-C39T/R | NXP |
获取价格 |
DIODE 300 W, UNIDIRECTIONAL, SILICON, TVS DIODE, HERMETIC SEALED, GLASS PACKAGE-2, Transie | |
BZT03C39-TAP | VISHAY |
获取价格 |
TVS DIODE 33V 54.1V SOD57 | |
BZT03C39-TR | VISHAY |
获取价格 |
Silicon Zener-Diodes with Surge Current Specification | |
BZT03C43 | SEMTECH |
获取价格 |
SILICON Z-DIODES AND TRANSIENT VOLTAGE SUPPRESSORS | |
BZT03C43 | VISHAY |
获取价格 |
Silicon Z-Diodes and Transient Voltage Suppressors |