Datasheet > BZT03C430

BZT03C430

更新时间： 2024-02-09 23:43:54

品牌	Logo	应用领域
商升特 - SEMTECH		二极管
页数	文件大小	规格书
4页	259K
描述
SILICON Z-DIODES AND TRANSIENT VOLTAGE SUPPRESSORS

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中文翻译

获取价格

技术参数
数据手册

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BZT03C430 技术参数

是否Rohs认证：	不符合	生命周期：	Obsolete
Reach Compliance Code：	unknown	ECCN代码：	EAR99
HTS代码：	8541.10.00.50	风险等级：	5.92
Is Samacsys：	N	最大钳位电压：	603 V
二极管类型：	TRANS VOLTAGE SUPPRESSOR DIODE	JESD-609代码：	e0
极性：	UNIDIRECTIONAL	最大重复峰值反向电压：	430 V
子类别：	Transient Suppressors	表面贴装：	NO
端子面层：	Tin/Lead (Sn/Pb)	Base Number Matches：	1

BZT03C430 数据手册

BZT03C…

SILICON Z-DIODES AND TRANSIENT VOLTAGE SUPPRESSORS

Feature

• High maximum operating temperature

• Low Leakage current

• Excellent stability

Mechanical Data

• Case: DO-41 molded plastic

• Epoxy: UL 94V-0 rate flame retardant

• Lead: Axial lead solderable per MIL-STD-202,

method 208 guaranteed

• Polarity: Color band denotes cathode end

• Mounting position: Any

Absolute Maximum Ratings (T_a= 25 C unless otherwise specified)

Parameter

Symbol

Value

Unit

T_tp= 25 C, lead length 10 mm

3.25

1.3

Total Power Dissipation

P_tot

T_amb= 45 C, PCB mounted

Non-repetitive Peak Reverse Power Dissipation

P_RSM

P_ZSM

300

600

(10 / 1000 µs exponential pulse, T_j= 25 C prior to surge)

Non-repetitive Peak Reverse Power Dissipation

(tp = 100 µs, square pulse, T_j= 25 C prior to surge)

Forward Voltage (I_F= 0.5 A, T_j= 25 C )

V_F

T_J

1.2

Junction Temperature Range

Storage Temperature Range

- 65 to + 175

T_stg

Thermal Characteristics

Value

Parameter

Symbol

R_thj-tp

Unit

K/W

Thermal Resistance from Junction to Tie-point

(Lead length = 10 mm)

Thermal Resistance from Junction to Ambient ¹⁾

R_thj-a

100

K/W

¹⁾Device mounted on an epoxy-glass printed circuit board, 1.5 mm thick, thickness of Cu-layer ≥ 40 µm on an must space

SEMTECH ELECTRONICS LTD.

(Subsidiary of Sino-Tech International Holdings Limited, a company

listed on the Hong Kong Stock Exchange, Stock Code: 724)

Dated : 06/02/2007

12 3 4

中文翻译

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