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BZM55C3V6 PDF预览

BZM55C3V6

更新时间: 2024-11-07 22:48:39
品牌 Logo 应用领域
威世 - VISHAY 二极管齐纳二极管
页数 文件大小 规格书
6页 84K
描述
Silicon Epitaxial Planar Z-Diodes

BZM55C3V6 技术参数

是否无铅: 不含铅是否Rohs认证: 符合
生命周期:Obsolete零件包装代码:MELF
包装说明:O-LELF-R2针数:2
Reach Compliance Code:unknown风险等级:5.76
其他特性:LOW NOISE外壳连接:ISOLATED
配置:SINGLE二极管元件材料:SILICON
二极管类型:ZENER DIODEJESD-30 代码:O-LELF-R2
JESD-609代码:e2湿度敏感等级:1
元件数量:1端子数量:2
封装主体材料:GLASS封装形状:ROUND
封装形式:LONG FORM峰值回流温度(摄氏度):260
极性:UNIDIRECTIONAL最大功率耗散:0.5 W
认证状态:Not Qualified标称参考电压:3.6 V
表面贴装:YES技术:ZENER
端子面层:TIN SILVER端子形式:WRAP AROUND
端子位置:END处于峰值回流温度下的最长时间:NOT SPECIFIED
最大电压容差:5.56%工作测试电流:5 mA
Base Number Matches:1

BZM55C3V6 数据手册

 浏览型号BZM55C3V6的Datasheet PDF文件第2页浏览型号BZM55C3V6的Datasheet PDF文件第3页浏览型号BZM55C3V6的Datasheet PDF文件第4页浏览型号BZM55C3V6的Datasheet PDF文件第5页浏览型号BZM55C3V6的Datasheet PDF文件第6页 
BZM55C...  
Vishay Telefunken  
Silicon Epitaxial Planar Z–Diodes  
Features  
Saving space  
Hermetic sealed parts  
Fits onto SOD 323 / SOT 23 footprints  
Electrical data identical with the devices  
BZT55C... / TZMC...  
Very sharp reverse characteristic  
Low reverse current level  
Very high stability  
96 12315  
Low noise  
Available with tighter tolerances  
Applications  
Voltage stabilization  
Absolute Maximum Ratings  
T = 25 C  
j
Parameter  
Power dissipation  
Z–current  
Junction temperature  
Storage temperature range  
Test Conditions  
300K/W  
Type  
Symbol  
Value  
500  
Unit  
mW  
mA  
C
P
V
R
thJA  
I
Z
P /V  
V
Z
T
175  
–65...+175  
j
T
stg  
C
Maximum Thermal Resistance  
T = 25 C  
j
Parameter  
Test Conditions  
Symbol Value Unit  
Junction ambient mounted on epoxy–glass hard tissue, Fig. 1  
Junction tie point 35 m copper clad, 0.9 mm copper area per electrode  
R
R
thJL  
500  
300  
K/W  
K/W  
thJA  
2
Electrical Characteristics  
T = 25 C  
j
Parameter  
Forward voltage  
Test Conditions  
I =200mA  
Type  
Symbol Min  
Typ Max Unit  
1.5  
V
F
V
F
www.vishay.de FaxBack +1-408-970-5600  
Document Number 85598  
Rev. 3, 01-Apr-99  
1 (6)  

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