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BZM55C39-TR PDF预览

BZM55C39-TR

更新时间: 2024-11-08 20:05:03
品牌 Logo 应用领域
威世 - VISHAY 测试二极管
页数 文件大小 规格书
7页 113K
描述
Zener Diode, 39V V(Z), 5.1%, 0.5W,

BZM55C39-TR 技术参数

是否无铅: 不含铅是否Rohs认证: 符合
生命周期:Obsolete零件包装代码:MELF
包装说明:O-LELF-R2针数:2
Reach Compliance Code:unknownECCN代码:EAR99
HTS代码:8541.10.00.50风险等级:5.64
其他特性:LOW NOISE外壳连接:ISOLATED
配置:SINGLE二极管元件材料:SILICON
二极管类型:ZENER DIODEJESD-30 代码:O-LELF-R2
JESD-609代码:e2湿度敏感等级:1
元件数量:1端子数量:2
封装主体材料:GLASS封装形状:ROUND
封装形式:LONG FORM峰值回流温度(摄氏度):260
极性:UNIDIRECTIONAL最大功率耗散:0.5 W
认证状态:Not Qualified标称参考电压:39 V
表面贴装:YES技术:ZENER
端子面层:TIN SILVER端子形式:WRAP AROUND
端子位置:END处于峰值回流温度下的最长时间:NOT SPECIFIED
最大电压容差:5.13%工作测试电流:2.5 mA
Base Number Matches:1

BZM55C39-TR 数据手册

 浏览型号BZM55C39-TR的Datasheet PDF文件第2页浏览型号BZM55C39-TR的Datasheet PDF文件第3页浏览型号BZM55C39-TR的Datasheet PDF文件第4页浏览型号BZM55C39-TR的Datasheet PDF文件第5页浏览型号BZM55C39-TR的Datasheet PDF文件第6页浏览型号BZM55C39-TR的Datasheet PDF文件第7页 
BZM55-Series  
Vishay Semiconductors  
www.vishay.com  
Small Signal Zener Diodes  
FEATURES  
• Saving space  
• Hermetic sealed parts  
• Electrical data identical with the devices  
BZT55..series, TZM..series  
• Fits onto SOD-323  
• Very sharp reverse characteristic  
• Low reverse current level  
• Very high stability  
PRIMARY CHARACTERISTICS  
• Low noise  
PARAMETER  
VZ range nom.  
Test current IZT  
VZ specification  
Int. construction  
VALUE  
2.4 to 75  
2.5; 5  
UNIT  
V
• AEC-Q101 qualified  
• Compliant to RoHS Directive 2002/95/EC and in  
accordance to WEEE 2002/96/EC  
mA  
Pulse current  
Single  
• Halogen-free according to IEC 61249-2-21 definition  
APPLICATIONS  
• Voltage stabilization  
ORDERING INFORMATION  
DEVICE NAME  
ORDERING CODE  
BZM55-series-TR3  
BZM55-series-TR  
TAPED UNITS PER REEL  
10 000 (8 mm tape on 13" reel)  
2500 (8 mm tape on 7" reel)  
MINIMUM ORDER QUANTITY  
BZM55-series  
10 000  
12 500  
BZM55-series  
PACKAGE  
MOLDING COMPOUND MOISTURE SENSITIVITY  
SOLDERING  
CONDITIONS  
PACKAGE NAME  
WEIGHT  
12 mg  
FLAMMABILITY RATING  
LEVEL  
MSL level 1  
MicroMELF  
UL 94 V-0  
260 °C/10 s at terminals  
(according J-STD-020)  
ABSOLUTE MAXIMUM RATINGS (Tamb = 25 °C, unless otherwise specified)  
PARAMETER  
TEST CONDITION  
SYMBOL  
VALUE  
UNIT  
mW  
Power dissipation  
Junction to ambient air  
RthJA 300 K/W  
Ptot  
500  
500  
Mounted on epoxy-glass hard tissue, fig. 1  
RthJA  
K/W  
35 μm copper clad, 0.9 mm2 copper area per  
electrode  
Junction tie point  
RthJL  
300  
K/W  
Tj  
Tstg  
IZ  
Junction temperature  
Storage temperature range  
Zener current  
175  
- 65 to + 175  
Ptot/VZ  
°C  
°C  
mA  
V
VF  
Forward voltage  
IF = 200 mA  
1.5  
Rev. 2.1, 25-Nov-11  
Document Number: 85597  
1
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com  
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT  
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000  

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