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BZM55C36-W PDF预览

BZM55C36-W

更新时间: 2024-11-09 04:12:43
品牌 Logo 应用领域
RECTRON /
页数 文件大小 规格书
5页 454K
描述
Zener Diode,

BZM55C36-W 技术参数

生命周期:ActiveReach Compliance Code:compliant
ECCN代码:EAR99HTS代码:8541.10.00.50
风险等级:5.8Base Number Matches:1

BZM55C36-W 数据手册

 浏览型号BZM55C36-W的Datasheet PDF文件第2页浏览型号BZM55C36-W的Datasheet PDF文件第3页浏览型号BZM55C36-W的Datasheet PDF文件第4页浏览型号BZM55C36-W的Datasheet PDF文件第5页 
BZM55C2V4  
-BZM55C47  
SURFACE MOUNT ZENER DIODE  
VOLTAGE RANGE 2.4 to 47 Volts POWER RATING 500 mWatts  
FEATURES  
* Saving space  
Hermetic sealed parts  
Electrical data identical with the devices BZT55 Series /  
TZM Series  
*
*
Fits onto SOD323/SOD110footprints  
Very sharp reverse characteristic  
Very high stability  
Low noise  
Available with tighter tolerances  
Low reverse current level  
Lead (Pb)-free component  
Component in accordance to RoHS 2002/95/EC  
and WEEE 2002/96/EC  
*
*
*
*
*
*
*
*
Micro-MELF  
.010 (0.25)  
.006 (0.15)  
MECHANICAL DATA  
* Case: MicroMELF  
* Weight: approx. 12mg  
.079 (2.00)  
.071 (1.80)  
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS  
Ratings at 25 oC ambient temperature unless otherwise specified.  
<.043 ( 1.10)  
Dimensions in inches and (millimeters)  
MAXIMUM RATINGES ( @ TA = 25oC unless otherwise noted )  
RATINGS  
SYMBOL  
PV  
VALUE  
500  
UNITS  
mW  
Power Dissipation @R <300 K/W  
θJA  
500  
Terminal resistance (Mounted on epoxy-glass hard tissue,Fig.1)  
R
θJA  
K/W  
300  
175  
Terminal resistance (35um copper clad,0.9mm2 copper area per electrode)  
Max. Operating Temperature Range  
R
K/W  
oC  
θJL  
TJ  
oC  
-65 to +175  
Storage Temperature Range  
TSTG  
ELECTRICAL CHARACTERISTICS ( @ TA = 25oC unless otherwise noted )  
CHARACTERISTICS  
Forward Voltage at IF= 200mA  
SYMBOL  
VF  
MIN.  
-
TYP.  
-
MAX.  
1.5  
UNITS  
Volts  
2007-3  

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Zener Diode, 39V V(Z), 5.13%, 0.5W, Silicon, Unidirectional, HERMETIC SEALED, GLASS, MICRO