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BZM55-B47T/R PDF预览

BZM55-B47T/R

更新时间: 2024-11-06 03:54:19
品牌 Logo 应用领域
CHENG-YI /
页数 文件大小 规格书
3页 241K
描述
Zener Diode,

BZM55-B47T/R 技术参数

生命周期:Contact ManufacturerReach Compliance Code:unknown
ECCN代码:EAR99HTS代码:8541.10.00.50
风险等级:5.8Base Number Matches:1

BZM55-B47T/R 数据手册

 浏览型号BZM55-B47T/R的Datasheet PDF文件第2页浏览型号BZM55-B47T/R的Datasheet PDF文件第3页 
BZM55-C2V4 SERIES  
PB FREE PRODUCT  
SURFACE MOUNT ZENER DIODES  
Unit : inch (mm)  
MICRO-MELF  
500 mWatts  
POWER  
VOLTAGE  
2.4 to 47 Volts  
FEATURES  
• Planar Die construction  
• 500mW Power Dissipation  
• Ideally Suited for Automated Assembly Processes  
MECHANICAL DATA  
• Case: Molded Glass MICRO-MELF  
.008(0.2)  
.043(1.1)  
.008(0.2)  
• Terminals: Solderable per MIL-STD-202E, Method 208  
• Polarity: See Diagram Below  
.079(2.0)  
.071(1.8)  
• Approx. Weight: 0.008 grams  
• Mounting Position: Any  
Packing information  
T/R - 2.5K per 7" plastic Reel  
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS  
Parameter  
Symbol  
Value  
Units  
mW  
Power Dissipation at Tamb = 25 OC  
500  
175  
P
TOT  
Junction Temperature  
OC  
OC  
TJ  
Storage Temperature Range  
-65 to +175  
TS  
Valid provided that leads at a distance of 8mm from case are kept at ambient temperature.  
Parameter  
Symbol  
Min.  
Typ.  
Max.  
Units  
Thermal Resistance Junction to Ambient Air  
--  
0.3  
1
K/mW  
RthA  
--  
Forward Voltage at IF = 100mA  
--  
V
VF  
--  
Valid provided that leads at a distance of 8mm from case are kept at ambient temperature.  
PAGE . 1  

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