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BZM55B4V7TR3 PDF预览

BZM55B4V7TR3

更新时间: 2024-11-06 21:17:47
品牌 Logo 应用领域
威世 - VISHAY 测试二极管
页数 文件大小 规格书
6页 149K
描述
Zener Diode, 4.7V V(Z), 2%, 0.5W, Silicon, Unidirectional, HERMETIC SEALED, MICROMELF-2

BZM55B4V7TR3 技术参数

是否Rohs认证: 符合生命周期:Obsolete
零件包装代码:MELF包装说明:O-LELF-R2
针数:2Reach Compliance Code:unknown
ECCN代码:EAR99HTS代码:8541.10.00.50
风险等级:5.75其他特性:LOW NOISE
外壳连接:ISOLATED配置:SINGLE
二极管元件材料:SILICON二极管类型:ZENER DIODE
JESD-30 代码:O-LELF-R2JESD-609代码:e2
湿度敏感等级:1元件数量:1
端子数量:2封装主体材料:GLASS
封装形状:ROUND封装形式:LONG FORM
峰值回流温度(摄氏度):260极性:UNIDIRECTIONAL
最大功率耗散:0.5 W认证状态:Not Qualified
标称参考电压:4.7 V表面贴装:YES
技术:ZENER端子面层:TIN SILVER
端子形式:WRAP AROUND端子位置:END
处于峰值回流温度下的最长时间:NOT SPECIFIED最大电压容差:2%
工作测试电流:5 mABase Number Matches:1

BZM55B4V7TR3 数据手册

 浏览型号BZM55B4V7TR3的Datasheet PDF文件第2页浏览型号BZM55B4V7TR3的Datasheet PDF文件第3页浏览型号BZM55B4V7TR3的Datasheet PDF文件第4页浏览型号BZM55B4V7TR3的Datasheet PDF文件第5页浏览型号BZM55B4V7TR3的Datasheet PDF文件第6页 
BZM55B...  
Vishay Telefunken  
Silicon Epitaxial Planar Z–Diodes  
Features  
Saving space  
Hermetic sealed parts  
Fits onto SOD 323 / SOT 23 footprints  
Electrical data identical with the devices  
BZT55B... / TZMB...  
Very sharp reverse characteristic  
Low reverse current level  
Very high stability  
96 12315  
Low noise  
Available with tighter tolerances  
V –tolerance ± 2%  
Z
Applications  
Voltage stabilization  
Order Instruction  
Type  
Ordering Code  
BZM55B2V4–TR  
BZM55B2V4–TR3  
Remarks  
Tape and Reel (2.500 pcs)  
Tape and Reel (10.000 pcs)  
BZM55B2V4  
Absolute Maximum Ratings  
T = 25 C  
j
Parameter  
Power dissipation  
Z–current  
Junction temperature  
Storage temperature range  
Test Conditions  
Type  
Symbol  
Value  
500  
Unit  
mW  
mA  
C
R
300K/W  
P
V
thJA  
I
Z
P /V  
V
Z
T
175  
–65...+175  
j
T
stg  
C
Maximum Thermal Resistance  
T = 25 C  
j
Parameter  
Test Conditions  
Symbol  
R
thJA  
Value  
500  
300  
Unit  
K/W  
K/W  
Junction ambient mounted on epoxy–glass hard tissue, Fig. 1  
Junction tie point 35 m copper clad, 0.9 mm copper area per electrode  
2
R
thJL  
Electrical Characteristics  
T = 25 C  
j
Parameter  
Forward voltage  
Test Conditions  
I =200mA  
Type  
Symbol Min  
Typ Max Unit  
1.5  
V
F
V
F
Document Number 85597  
Rev. 6, 25-Jun-01  
www.vishay.com  
1 (6)  

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