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BZM55-B3V0 PDF预览

BZM55-B3V0

更新时间: 2024-11-11 03:20:39
品牌 Logo 应用领域
固锝 - GOOD-ARK 二极管齐纳二极管测试
页数 文件大小 规格书
6页 229K
描述
Zener Diodes

BZM55-B3V0 技术参数

是否Rohs认证: 符合生命周期:Active
Reach Compliance Code:compliantECCN代码:EAR99
HTS代码:8541.10.00.50风险等级:5.78
配置:SINGLE二极管类型:ZENER DIODE
最大动态阻抗:90 Ω元件数量:1
最高工作温度:175 °C最大功率耗散:0.5 W
标称参考电压:3 V子类别:Voltage Reference Diodes
表面贴装:YES最大电压容差:2%
工作测试电流:5 mABase Number Matches:1

BZM55-B3V0 数据手册

 浏览型号BZM55-B3V0的Datasheet PDF文件第2页浏览型号BZM55-B3V0的Datasheet PDF文件第3页浏览型号BZM55-B3V0的Datasheet PDF文件第4页浏览型号BZM55-B3V0的Datasheet PDF文件第5页浏览型号BZM55-B3V0的Datasheet PDF文件第6页 
BZM55 Series  
Zener Diodes  
Zener Voltage Range: 2.4 to 75 Volts Power Dissipation: 500mW  
Features  
Saving space  
Hermetic sealed parts  
Electrical data identical with the devices BZT55..Series  
Fits onto SOD-323 / SOD-110 footprints  
Very sharp reverse characteristic  
Low reverse current level  
Very high stability  
Low noise  
Package Dimensions in mm (inches)  
Available with tighter tolerances  
For voltage stabilization  
Mechanical Data  
Case: MicroMELF  
Weight: approx. 12 mg  
Maximum Ratings and Thermal Characteristics  
(Tamb=25oC, unless otherwise specified)  
Parameter  
Symbol  
Value  
Unit  
Zener current (see Table "Characteristics")  
Power dissipation at RthJA < 300K/W  
Junction temperature  
IZ  
Ptot/VZ  
500  
mA  
mW  
oC  
Ptot  
T
175  
j
Storage temperature range  
Tstg  
VF  
-65 to +175  
1.5  
oC  
Forward voltage at IF=200mA  
V
Junction ambient (mounted on epoxy-glass hard tissue, Fig.1)  
RθJA  
500  
K/W  
Junction ambient (35um copper clad, 0.9mm2 copper area per  
electrode))  
RθJL  
300  
K/W  
512  

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