Datasheet > BZM55-B3V3T/R

BZM55-B3V3T/R

更新时间： 2024-11-12 03:04:59

品牌	Logo	应用领域
CHENG-YI		/
页数	文件大小	规格书
3页	241K
描述
Zener Diode,

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中文翻译

获取价格

技术参数
数据手册

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BZM55-B3V3T/R 技术参数

生命周期：	Contact Manufacturer	Reach Compliance Code：	unknown
ECCN代码：	EAR99	HTS代码：	8541.10.00.50
风险等级：	5.8	Base Number Matches：	1

BZM55-B3V3T/R 数据手册

BZM55-C2V4 SERIES

PB FREE PRODUCT

SURFACE MOUNT ZENER DIODES

Unit : inch (mm)

MICRO-MELF

500 mWatts

POWER

VOLTAGE

2.4 to 47 Volts

FEATURES

• Planar Die construction

• 500mW Power Dissipation

• Ideally Suited for Automated Assembly Processes

MECHANICAL DATA

• Case: Molded Glass MICRO-MELF

.008(0.2)

.043(1.1)

.008(0.2)

• Terminals: Solderable per MIL-STD-202E, Method 208

• Polarity: See Diagram Below

.079(2.0)

.071(1.8)

• Approx. Weight: 0.008 grams

• Mounting Position: Any

•

Packing information

T/R - 2.5K per 7" plastic Reel

MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS

Parameter

Symbol

Value

Units

Power Dissipation at Tamb = 25 ^OC

500

175

TOT

Junction Temperature

^OC

Storage Temperature Range

-65 to +175

Valid provided that leads at a distance of 8mm from case are kept at ambient temperature.

Parameter

Symbol

Min.

Typ.

Max.

Units

Thermal Resistance Junction to Ambient Air

0.3

K/mW

RthA

Forward Voltage at IF = 100mA

Valid provided that leads at a distance of 8mm from case are kept at ambient temperature.

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