Datasheet > BZG85C3V9

BZG85C3V9

更新时间： 2024-11-12 02:59:31

品牌	Logo	应用领域
威世 - VISHAY		/
页数	文件大小	规格书
4页	65K
描述
Zener Diode, 3.9V V(Z), 5%, 1.25W, Silicon, Unidirectional, DO-214, PLASTIC, DO-214, 2 PIN

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数据手册

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BZG85C3V9 数据手册

BZG85C2V7–BZG85C100

Vishay Telefunken

Silicon Z–Diodes

Features

Glass passivated junction

High reliability

Voltage range 3.3 V to 100 V

Fits onto 5 mm SMD footpads

Wave and reflow solderable

Znom

±5% tolerance

15 811

Applications

Voltage stabilization

Absolute Maximum Ratings

T = 25 C

Parameter

Power dissipation

Non repetitive peak

Test Conditions

<100K/W, T =25 C

Type Symbol

Value

1.25

Unit

ZSM

thJA

amb

t =100 s sq.pulse, T =25 C prior to surge

surge power dissipation

Junction temperature

Storage temperature range

stg

150

–65...+150

Maximum Thermal Resistance

T = 25 C

Parameter

Junction lead

Junction ambient

Test Conditions

Symbol

Value

150

125

100

Unit

K/W

thJL

thJA

mounted on epoxy–glass hard tissue, Fig. 1a

mounted on epoxy–glass hard tissue, Fig. 1b

mounted on Al–oxid–ceramic (Al O ), Fig. 1b

Electrical Characteristics

T = 25 C

Parameter

Forward voltage

Test Conditions

I =0.2A

Type

Symbol Min

Typ Max Unit

1.2

Document Number 85624

Rev. 2, 26-Jul-99

www.vishay.de • FaxBack +1-408-970-5600

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