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BZG85C56 PDF预览

BZG85C56

更新时间: 2024-11-11 20:54:19
品牌 Logo 应用领域
威世 - VISHAY 测试光电二极管
页数 文件大小 规格书
4页 65K
描述
Zener Diode, 56V V(Z), 5%, 1.25W, Silicon, Unidirectional, DO-214, PLASTIC, DO-214, 2 PIN

BZG85C56 技术参数

生命周期:Obsolete零件包装代码:DO-214
包装说明:PLASTIC, DO-214, 2 PIN针数:2
Reach Compliance Code:unknownECCN代码:EAR99
HTS代码:8541.10.00.50风险等级:5.84
其他特性:HIGH RELIABILITY配置:SINGLE
二极管元件材料:SILICON二极管类型:ZENER DIODE
JEDEC-95代码:DO-214JESD-30 代码:R-PDSO-C2
元件数量:1端子数量:2
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:SMALL OUTLINE极性:UNIDIRECTIONAL
最大功率耗散:1.25 W认证状态:Not Qualified
标称参考电压:56 V表面贴装:YES
技术:ZENER端子形式:C BEND
端子位置:DUAL最大电压容差:5%
工作测试电流:4 mABase Number Matches:1

BZG85C56 数据手册

 浏览型号BZG85C56的Datasheet PDF文件第2页浏览型号BZG85C56的Datasheet PDF文件第3页浏览型号BZG85C56的Datasheet PDF文件第4页 
BZG85C2V7–BZG85C100  
Vishay Telefunken  
Silicon Z–Diodes  
Features  
Glass passivated junction  
High reliability  
Voltage range 3.3 V to 100 V  
Fits onto 5 mm SMD footpads  
Wave and reflow solderable  
V
Znom  
±5% tolerance  
15 811  
Applications  
Voltage stabilization  
Absolute Maximum Ratings  
T = 25 C  
j
Parameter  
Power dissipation  
Non repetitive peak  
Test Conditions  
<100K/W, T =25 C  
Type Symbol  
Value  
1.25  
50  
Unit  
W
W
R
P
V
P
ZSM  
thJA  
amb  
t =100 s sq.pulse, T =25 C prior to surge  
p
j
surge power dissipation  
Junction temperature  
Storage temperature range  
T
T
stg  
150  
–65...+150  
C
C
j
Maximum Thermal Resistance  
T = 25 C  
j
Parameter  
Junction lead  
Junction ambient  
Test Conditions  
Symbol  
Value  
35  
150  
125  
100  
Unit  
K/W  
K/W  
K/W  
K/W  
R
thJL  
thJA  
thJA  
thJA  
mounted on epoxy–glass hard tissue, Fig. 1a  
mounted on epoxy–glass hard tissue, Fig. 1b  
R
R
R
mounted on Al–oxid–ceramic (Al O ), Fig. 1b  
2
3
Electrical Characteristics  
T = 25 C  
j
Parameter  
Forward voltage  
Test Conditions  
I =0.2A  
Type  
Symbol Min  
Typ Max Unit  
1.2  
V
F
V
F
Document Number 85624  
Rev. 2, 26-Jul-99  
www.vishay.de FaxBack +1-408-970-5600  
1 (4)  

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