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BZG04-110T/R PDF预览

BZG04-110T/R

更新时间: 2024-11-01 13:06:03
品牌 Logo 应用领域
恩智浦 - NXP 瞬态抑制器二极管
页数 文件大小 规格书
7页 35K
描述
DIODE 300 W, UNIDIRECTIONAL, SILICON, TVS DIODE, DO-214AC, PLASTIC PACKAGE-2, Transient Suppressor

BZG04-110T/R 技术参数

生命周期:Obsolete零件包装代码:DO-214AC
包装说明:R-PDSO-C2针数:2
Reach Compliance Code:unknownECCN代码:EAR99
HTS代码:8541.10.00.50风险等级:5.78
其他特性:HIGH RELIABILITY最小击穿电压:124 V
配置:SINGLE二极管元件材料:SILICON
二极管类型:TRANS VOLTAGE SUPPRESSOR DIODEJEDEC-95代码:DO-214AC
JESD-30 代码:R-PDSO-C2最大非重复峰值反向功率耗散:300 W
元件数量:1端子数量:2
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:SMALL OUTLINE极性:UNIDIRECTIONAL
认证状态:Not Qualified最大重复峰值反向电压:110 V
表面贴装:YES技术:AVALANCHE
端子形式:C BEND端子位置:DUAL
Base Number Matches:1

BZG04-110T/R 数据手册

 浏览型号BZG04-110T/R的Datasheet PDF文件第2页浏览型号BZG04-110T/R的Datasheet PDF文件第3页浏览型号BZG04-110T/R的Datasheet PDF文件第4页浏览型号BZG04-110T/R的Datasheet PDF文件第5页浏览型号BZG04-110T/R的Datasheet PDF文件第6页浏览型号BZG04-110T/R的Datasheet PDF文件第7页 
DISCRETE SEMICONDUCTORS  
DATA SHEET  
handbook, halfpage  
68  
BZG04 series  
Transient voltage suppressor  
diodes  
1996 Sep 19  
Preliminary specification  
Supersedes data of 1996 Jun 10  

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