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BZG03C33-TR PDF预览

BZG03C33-TR

更新时间: 2024-11-06 13:06:03
品牌 Logo 应用领域
威世 - VISHAY 二极管测试
页数 文件大小 规格书
5页 74K
描述
Zener Diode, 33V V(Z), 6.1%, 3W,

BZG03C33-TR 数据手册

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BZG03C...  
Vishay Telefunken  
Silicon Z–Diodes  
Features  
Glass passivated junction  
High reliability  
Voltage range 10V to 270V  
Fits onto 5 mm SMD footpads  
Wave and reflow solderable  
15 811  
Applications  
Voltage stabilization  
Absolute Maximum Ratings  
T = 25 C  
j
Parameter  
Power dissipation  
Test Conditions  
<25K/W, T =100 C  
Type Symbol  
Value  
3
1.25  
600  
Unit  
W
W
R
R
P
V
P
V
thJA  
amb  
<100K/W, T =50 C  
thJA  
amb  
Non repetitive peak surge power  
dissipation  
t =100 s sq.pulse, T =25 C  
P
ZSM  
W
p
j
prior to surge  
Junction temperature  
Storage temperature range  
T
T
stg  
175  
–65...+150  
C
C
j
Maximum Thermal Resistance  
T = 25 C  
j
Parameter  
Junction lead  
Test Conditions  
Symbol  
Value  
25  
150  
125  
100  
Unit  
K/W  
K/W  
K/W  
K/W  
R
thJL  
thJA  
thJA  
thJA  
Junction ambient mounted on epoxy–glass hard tissue, Fig. 1a  
mounted on epoxy–glass hard tissue, Fig. 1b  
R
R
R
mounted on Al–oxid–ceramic (Al O ), Fig. 1b  
2
3
Electrical Characteristics  
T = 25 C  
j
Parameter  
Forward voltage  
Test Conditions  
I =0.5A  
Type  
Symbol Min  
Typ Max Unit  
1.2  
V
F
V
F
www.vishay.de FaxBack +1-408-970-5600  
Document Number 85593  
Rev. 5, 01-Apr-99  
1 (5)  

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