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BYX85TR PDF预览

BYX85TR

更新时间: 2024-11-07 20:53:47
品牌 Logo 应用领域
威世 - VISHAY 局域网二极管
页数 文件大小 规格书
5页 141K
描述
Rectifier Diode, Avalanche, 1 Phase, 1 Element, 2A, 800V V(RRM), Silicon, HALOGEN FREE AND ROHS COMPLIANT, HERMETIC SEALED, GLASS PACKAGE-2

BYX85TR 技术参数

是否无铅: 不含铅是否Rohs认证: 符合
生命周期:Active包装说明:HALOGEN FREE AND ROHS COMPLIANT, HERMETIC SEALED, GLASS PACKAGE-2
Reach Compliance Code:compliantECCN代码:EAR99
HTS代码:8541.10.00.80风险等级:5.74
应用:GENERAL PURPOSE外壳连接:ISOLATED
配置:SINGLE二极管元件材料:SILICON
二极管类型:RECTIFIER DIODE最大正向电压 (VF):1 V
JESD-30 代码:E-LALF-W2JESD-609代码:e2
湿度敏感等级:1最大非重复峰值正向电流:50 A
元件数量:1相数:1
端子数量:2最高工作温度:175 °C
最低工作温度:-55 °C最大输出电流:2 A
封装主体材料:GLASS封装形状:ELLIPTICAL
封装形式:LONG FORM峰值回流温度(摄氏度):260
最大重复峰值反向电压:800 V最大反向电流:1 µA
最大反向恢复时间:4 µs子类别:Rectifier Diodes
表面贴装:NO技术:AVALANCHE
端子面层:Tin/Silver (Sn/Ag)端子形式:WIRE
端子位置:AXIAL处于峰值回流温度下的最长时间:30
Base Number Matches:1

BYX85TR 数据手册

 浏览型号BYX85TR的Datasheet PDF文件第2页浏览型号BYX85TR的Datasheet PDF文件第3页浏览型号BYX85TR的Datasheet PDF文件第4页浏览型号BYX85TR的Datasheet PDF文件第5页 
BYX82, BYX83, BYX84, BYX85, BYX86  
www.vishay.com  
Vishay Semiconductors  
Standard Avalanche Sinterglass Diode  
FEATURES  
• Glass passivated junction  
• Hermetically sealed package  
• Low reverse current  
• High surge current loading  
• Material categorization:  
For definitions of compliance please see  
www.vishay.com/doc?99912  
949539  
APPLICATIONS  
MECHANICAL DATA  
Case: SOD-57  
• Rectification, general purpose  
Terminals: plated axial leads, solderable per MIL-STD-750,  
method 2026  
Polarity: color band denotes cathode end  
Mounting position: any  
Weight: approx. 369 mg  
ORDERING INFORMATION (Example)  
DEVICE NAME  
ORDERING CODE  
TAPED UNITS  
MINIMUM ORDER QUANTITY  
BYX86  
BYX86TR  
5000 per 10" tape and reel  
5000 per ammopack  
25 000  
25 000  
BYX86  
BYX86TAP  
PARTS TABLE  
PART  
TYPE DIFFERENTIATION  
PACKAGE  
SOD-57  
SOD-57  
SOD-57  
SOD-57  
SOD-57  
BYX82  
V
V
V
V
R = 200 V; IF(AV) = 2 A  
BYX83  
R = 400 V; IF(AV) = 2 A  
R = 600 V; IF(AV) = 2 A  
R = 800 V; IF(AV) = 2 A  
BYX84  
BYX85  
BYX86  
VR = 1000 V; IF(AV) = 2 A  
ABSOLUTE MAXIMUM RATINGS (Tamb = 25 °C, unless otherwise specified)  
PARAMETER  
TEST CONDITION  
PART  
BYX82  
BYX83  
BYX84  
BYX85  
BYX86  
SYMBOL  
VALUE  
200  
400  
600  
800  
1000  
50  
UNIT  
VR = VRRM  
VR = VRRM  
VR = VRRM  
VR = VRRM  
VR = VRRM  
IFSM  
V
V
Reverse voltage = repetitive peak  
reverse voltage  
See electrical characteristics  
V
V
V
Peak forward surge current  
Repetitive peak forward current  
Average forward current  
i2t-rating  
tp = 10 ms, half sine wave  
A
IFRM  
10  
A
Tamb 45 °C  
IF(AV)  
i2 t  
2
A
A2s  
8
Junction and storage temperature  
range  
Tj = Tstg  
- 55 to + 175  
°C  
Rev. 1.7, 11-Sep-12  
Document Number: 86052  
1
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com  
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT  
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000  

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