BYWE29-50, BYWE29-100, BYWE29-150, BYWE29-200
www.vishay.com
Vishay General Semiconductor
Ultrafast Rectifier
FEATURES
• Power pack
TO-220AC
• Glass passivated pellet chip junction
• Ultrafast recovery time
• Low switching losses, high efficiency
• Low forward voltage drop
• High forward surge capability
• Solder dip 275 °C max. 10 s, per JESD 22-B106
2
• Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912
BYWE29-xxx
PIN 1
TYPICAL APPLICATIONS
CASE
PIN 2
For use in high frequency rectifier of switching mode
power supplies, inverters, freewheeling diodes, DC/DC
converters, and other power switching application.
PRIMARY CHARACTERISTICS
MECHANICAL DATA
IF(AV)
8.0 A
Case: TO-220AC
Molding compound meets UL 94 V-0 flammability rating
Base P/N-E3 - RoHS-compliant, commercial grade
VRRM
IFSM
50 V, 100 V, 150 V, 200 V
100 A
25 ns
trr
Terminals: Matte tin plated leads, solderable per
J-STD-002 and JESD 22-B102
E3 suffix meets JESD 201 class 1A whisker test
VF
0.8 V
TJ max.
Package
Diode variations
150 °C
TO-220AC
Single die
Polarity: As marked
Mounting Torque: 10 in-lbs max.
MAXIMUM RATINGS (TC = 25 °C unless otherwise noted)
PARAMETER
SYMBOL
BYWE29-50
BYWE29-100
BYWE29-150
BYWE29-200
UNIT
Maximum repetitive peak reverse voltage
Maximum RMS voltage
VRRM
50
35
50
100
70
150
105
150
200
140
200
V
V
V
VRMS
Maximum DC blocking voltage
VDC
100
Maximum average forward rectified current
at TC = 105 °C
IF(AV)
8.0
A
Peak forward surge current 8.3 ms single
half sine-wave superimposed on rated load
IFSM
100
A
Operating and storage temperature range
TJ, TSTG
-65 to +150
°C
ELECTRICAL CHARACTERISTICS (TC = 25 °C unless otherwise noted)
PARAMETER
TEST CONDITIONS
IF = 20 A TJ = 25 °C
IF = 8.0 A TJ = 150 °C
C = 25 °C
TC = 100 °C
IF = 1 A, VR = 30 V,
dI/dt = 100 A/μs,
rr = 10 % IRM
SYMBOL BYWE29-50 BYWE29-100 BYWE29-150 BYWE29-200 UNIT
1.3
Maximum instantaneous
forward voltage
(1)
VF
V
0.8
10
T
Maximum DC reverse current
at rated DC blocking voltage
IR
μA
500
Maximum reverse recovery
time
trr
25
45
ns
I
Typical junction capacitance
4.0 V, 1 MHz
CJ
pF
Note
(1)
Pulse test: 300 μs pulse width, 1 % duty cycle
Revision: 23-Feb-16
Document Number: 87922
1
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000