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BYW83

更新时间: 2024-11-30 22:08:47
品牌 Logo 应用领域
威世 - VISHAY /
页数 文件大小 规格书
4页 53K
描述
Silicon Mesa Rectifiers

BYW83 数据手册

 浏览型号BYW83的Datasheet PDF文件第2页浏览型号BYW83的Datasheet PDF文件第3页浏览型号BYW83的Datasheet PDF文件第4页 
BYW82...BYW86  
Vishay Telefunken  
Silicon Mesa Rectifiers  
Features  
Glass passivated junction  
Hermetically sealed package  
Controlled avalanche characteristics  
Low reverse current  
High surge current loading  
Electrically equivalent diodes:  
BYW82 – 1N5624 BYW83 – 1N5625  
BYW84 – 1N5626 BYW85 – 1N5627  
94 9588  
Applications  
Rectifier, general purpose  
Absolute Maximum Ratings  
T = 25 C  
j
Parameter  
Reverse voltage  
=Repetitive peak reverse voltage  
Test Conditions  
Type  
Symbol  
Value  
200  
400  
600  
800  
1000  
100  
18  
Unit  
V
V
V
V
V
A
A
A
BYW82  
BYW83  
BYW84  
BYW85  
BYW86  
V =V  
R
RRM  
RRM  
RRM  
RRM  
RRM  
V =V  
R
V =V  
R
V =V  
R
V =V  
R
Peak forward surge current  
Repetitive peak forward current  
Average forward current  
t =10ms, half sinewave  
I
p
FSM  
I
FRM  
I
3
T
65 C  
FAV  
amb  
Pulse avalanche peak power  
t =20 s, half sinewave,  
p
P
R
1000  
W
T =175 C  
j
Pulse energy in avalanche mode,  
non repetitive  
I
=1A, T =175 C  
E
R
20  
mJ  
(BR)R  
j
(inductive load switch off)  
i *t–rating  
2
2
2
i *t  
40  
A *s  
Junction and storage  
temperature range  
T =T  
–65...+175  
C
j
stg  
Maximum Thermal Resistance  
T = 25 C  
j
Parameter  
Junction ambient  
Test Conditions  
l=10mm, T =constant  
on PC board with spacing 37.5mm  
Symbol  
Value  
25  
70  
Unit  
K/W  
K/W  
R
thJA  
R
thJA  
L
Document Number 86051  
Rev. 2, 24-Jun-98  
www.vishay.de FaxBack +1-408-970-5600  
1 (4)  

BYW83 替代型号

型号 品牌 替代类型 描述 数据表
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