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BYW85-TAP PDF预览

BYW85-TAP

更新时间: 2024-12-01 13:06:03
品牌 Logo 应用领域
威世 - VISHAY /
页数 文件大小 规格书
4页 53K
描述
Rectifier Diode, Avalanche, 1 Phase, 1 Element, 3A, 800V V(RRM), Silicon, HALOGEN FREE AND ROHS COMPLIANT, HERMETIC SEALED, GLASS PACKAGE-2

BYW85-TAP 技术参数

是否Rohs认证: 符合生命周期:Active
包装说明:HALOGEN FREE AND ROHS COMPLIANT, HERMETIC SEALED, GLASS PACKAGE-2Reach Compliance Code:not_compliant
ECCN代码:EAR99HTS代码:8541.10.00.80
Factory Lead Time:11 weeks风险等级:5.37
应用:GENERAL PURPOSE外壳连接:ISOLATED
配置:SINGLE二极管元件材料:SILICON
二极管类型:RECTIFIER DIODE最大正向电压 (VF):1 V
JESD-30 代码:E-LALF-W2JESD-609代码:e2
最大非重复峰值正向电流:100 A元件数量:1
相数:1端子数量:2
最高工作温度:175 °C最低工作温度:-55 °C
最大输出电流:3 A封装主体材料:GLASS
封装形状:ELLIPTICAL封装形式:LONG FORM
最大重复峰值反向电压:800 V最大反向电流:1 µA
最大反向恢复时间:7.5 µs子类别:Rectifier Diodes
表面贴装:NO技术:AVALANCHE
端子面层:Tin/Silver (Sn96.5Ag3.5)端子形式:WIRE
端子位置:AXIALBase Number Matches:1

BYW85-TAP 数据手册

 浏览型号BYW85-TAP的Datasheet PDF文件第2页浏览型号BYW85-TAP的Datasheet PDF文件第3页浏览型号BYW85-TAP的Datasheet PDF文件第4页 
BYW82...BYW86  
Vishay Telefunken  
Silicon Mesa Rectifiers  
Features  
Glass passivated junction  
Hermetically sealed package  
Controlled avalanche characteristics  
Low reverse current  
High surge current loading  
Electrically equivalent diodes:  
BYW82 – 1N5624 BYW83 – 1N5625  
BYW84 – 1N5626 BYW85 – 1N5627  
94 9588  
Applications  
Rectifier, general purpose  
Absolute Maximum Ratings  
T = 25 C  
j
Parameter  
Reverse voltage  
=Repetitive peak reverse voltage  
Test Conditions  
Type  
Symbol  
Value  
200  
400  
600  
800  
1000  
100  
18  
Unit  
V
V
V
V
V
A
A
A
BYW82  
BYW83  
BYW84  
BYW85  
BYW86  
V =V  
R
RRM  
RRM  
RRM  
RRM  
RRM  
V =V  
R
V =V  
R
V =V  
R
V =V  
R
Peak forward surge current  
Repetitive peak forward current  
Average forward current  
t =10ms, half sinewave  
I
p
FSM  
I
FRM  
I
3
T
65 C  
FAV  
amb  
Pulse avalanche peak power  
t =20 s, half sinewave,  
p
P
R
1000  
W
T =175 C  
j
Pulse energy in avalanche mode,  
non repetitive  
I
=1A, T =175 C  
E
R
20  
mJ  
(BR)R  
j
(inductive load switch off)  
i *t–rating  
2
2
2
i *t  
40  
A *s  
Junction and storage  
temperature range  
T =T  
–65...+175  
C
j
stg  
Maximum Thermal Resistance  
T = 25 C  
j
Parameter  
Junction ambient  
Test Conditions  
l=10mm, T =constant  
on PC board with spacing 37.5mm  
Symbol  
Value  
25  
70  
Unit  
K/W  
K/W  
R
thJA  
R
thJA  
L
Document Number 86051  
Rev. 2, 24-Jun-98  
www.vishay.de FaxBack +1-408-970-5600  
1 (4)  

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