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BYW55-TAP

更新时间: 2024-11-05 21:07:27
品牌 Logo 应用领域
威世 - VISHAY 局域网二极管
页数 文件大小 规格书
4页 118K
描述
Rectifier Diode, Avalanche, 1 Phase, 1 Element, 2A, 800V V(RRM), Silicon, HALOGEN FREE AND ROHS COMPLIANT, HERMETIC SEALED, GLASS PACKAGE-2

BYW55-TAP 技术参数

是否无铅: 不含铅是否Rohs认证: 符合
生命周期:Active包装说明:E-LALF-W2
针数:2Reach Compliance Code:not_compliant
ECCN代码:EAR99HTS代码:8541.10.00.80
Factory Lead Time:12 weeks风险等级:1.06
应用:GENERAL PURPOSE外壳连接:ISOLATED
配置:SINGLE二极管元件材料:SILICON
二极管类型:RECTIFIER DIODE最大正向电压 (VF):1 V
JESD-30 代码:E-LALF-W2JESD-609代码:e2
最大非重复峰值正向电流:50 A元件数量:1
相数:1端子数量:2
最高工作温度:175 °C最低工作温度:-55 °C
最大输出电流:2 A封装主体材料:GLASS
封装形状:ELLIPTICAL封装形式:LONG FORM
峰值回流温度(摄氏度):260最大重复峰值反向电压:800 V
最大反向恢复时间:4 µs子类别:Rectifier Diodes
表面贴装:NO技术:AVALANCHE
端子面层:Tin/Silver (Sn96.5Ag3.5)端子形式:WIRE
端子位置:AXIAL处于峰值回流温度下的最长时间:30
Base Number Matches:1

BYW55-TAP 数据手册

 浏览型号BYW55-TAP的Datasheet PDF文件第2页浏览型号BYW55-TAP的Datasheet PDF文件第3页浏览型号BYW55-TAP的Datasheet PDF文件第4页 
BYW52, BYW53, BYW54, BYW55, BYW56  
www.vishay.com  
Vishay Semiconductors  
Standard Avalanche Sinterglass Diode  
FEATURES  
• Controlled avalanche characteristics  
• Glass passivated junction  
• Hermetically sealed package  
• Low reverse current  
• High surge current loading  
• Material categorization:  
For definitions of compliance please see  
www.vishay.com/doc?99912  
949539  
APPLICATIONS  
MECHANICAL DATA  
Case: SOD-57  
• Rectification, general purpose  
Terminals: plated axial leads, solderable per MIL-STD-750,  
method 2026  
Polarity: color band denotes cathode end  
Mounting position: any  
Weight: approx. 369 mg  
ORDERING INFORMATION (Example)  
DEVICE NAME  
ORDERING CODE  
TAPED UNITS  
MINIMUM ORDER QUANTITY  
BYW56  
BYW56-TR  
5000 per 10" tape and reel  
5000 per ammopack  
25 000  
25 000  
BYW56  
BYW56-TAP  
PARTS TABLE  
PART  
TYPE DIFFERENTIATION  
PACKAGE  
SOD-57  
SOD-57  
SOD-57  
SOD-57  
SOD-57  
BYW52  
V
V
V
V
R = 200 V; IF(AV) = 2 A  
BYW53  
R = 400 V; IF(AV) = 2 A  
R = 600 V; IF(AV) = 2 A  
R = 800 V; IF(AV) = 2 A  
BYW54  
BYW55  
BYW56  
VR = 1000 V; IF(AV) = 2 A  
ABSOLUTE MAXIMUM RATINGS (Tamb = 25 °C, unless otherwise specified)  
PARAMETER  
TEST CONDITION  
See electrical characteristics  
tp = 10 ms, half sine wave  
PART  
BYW52  
BYW53  
BYW54  
BYW55  
BYW56  
SYMBOL  
VALUE  
200  
400  
600  
800  
1000  
50  
UNIT  
VR = VRRM  
VR = VRRM  
VR = VRRM  
VR = VRRM  
VR = VRRM  
IFSM  
V
V
Reverse voltage = repetitive peak  
reverse voltage  
V
V
V
Peak forward surge current  
Repetitive peak forward current  
Average forward current  
A
A
A
W
IFRM  
12  
= 180 °  
IF(AV)  
2
Pulse avalanche peak power  
tp = 20 μs half sine wave, Tj = 175 °C  
PR  
1000  
Pulse energy in avalanche mode, non  
repetitive (inductive load switch off)  
i2t-rating  
l
(BR)R = 1 A, Tj = 175 °C  
ER  
i2t  
20  
mJ  
A2s  
°C  
8
Junction and storage temperature  
range  
Tj = Tstg  
- 55 to + 175  
Rev. 1.8, 11-Sep-12  
Document Number: 86049  
1
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com  
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT  
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000  

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