Datasheet > BYV29-600P

BYV29-600P

更新时间： 2022-02-26 14:16:49

品牌	Logo	应用领域
瑞能 - WEEN		/
页数	文件大小	规格书
10页	518K
描述
Ultrafast power diode

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BYV29-600P 数据手册

WeEn Semiconductors

BYV29-600P

Ultrafast power diode

10. Characteristics

Table 7. Characteristics

Symbol Parameter

Static characteristics

Conditions

Min

Typ

Max

Unit

V_F

forward current

I_F= 8 A; T_j= 25 °C; Fig. 6

I_F= 8 A; T_j= 150 °C; Fig. 6

V_R= 600 V; T_j= 25 °C

1.05

1.3

1.1

0.9

I_R

reverse current

μA

V_R= 600 V; T_j= 150 °C

0.4

Dynamic characteristics

Q_r

reverse charge

I_F= 1 A; V_R= 30 V; dI_F/dt = 100 A/μs;

T_j= 25 °C; Fig. 7

t_rr

reverse recovery time

I_F= 1 A; V_R= 30 V; dI_F/dt = 100 A/μs;

T_j= 25 °C; Fig. 7

I_RM

peak reverse recovery I_F= 1 A; V_R= 30 V; dI_F/dt = 50 A/μs;

current

1.9

2.8

T_j= 25 °C; Fig. 7

I_F= 1 A; V_R= 30 V; dI_F/dt = 100 A/μs;

T_j= 25 °C; Fig. 7

atc12-006

(A)

(2)

(1)

(3)

time

25 %

100 %

003aac562

(V)

V_o= 0.973 V; R_s= 0.0168 Ω

(1) T_j= 150 °C; typical values

(2) T_j= 150 °C; maximum values

(3) T_j= 25 °C; maximum values

Fig. 7. Reverse recovery deﬁnitions; ramp recovery

Fig. 6. Forward current as a function of forward voltage

BYV29-600P

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Product data sheet

11 July 2017

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