Datasheet > BYV29-600P

BYV29-600P

更新时间： 2024-02-27 16:19:48

品牌	Logo	应用领域
瑞能 - WEEN		/
页数	文件大小	规格书
10页	518K
描述
Ultrafast power diode

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BYV29-600P 数据手册

WeEn Semiconductors

BYV29-600P

Ultrafast power diode

8. Limiting values

Table 5. Limiting values

In accordance with the Absolute Maximum Rating System (IEC 60134).

Symbol

Parameter

Conditions

Values

Unit

V_RRM

repetitive peak reverse

voltage

600

V_RWM

crest working reverse

voltage

600

V_R

reverse voltage

600

I_F(AV)

average forward current

δ = 0.5 ; square-wave pulse; T_mb≤ 150 °C;

Fig. 1; Fig. 2; Fig. 3

I_FRM

I_FSM

repetitive peak forward

current

δ = 0.5 ; t_p= 25 μs; T_mb≤ 150 °C;

square-wave pulse

non-repetitive peak

forward current

t_p= 10 ms; T_j(init)= 25 °C; sine-wave pulse;

Fig. 4

120

132

t_p= 8.3 ms; T_j(init)= 25 °C; sine-wave pulse;

storage temperature

junction temperature

-55 to 175

175

°C

stg

T_j

atc12-002

atc12-001

tot

δ = 1

a = 1.57

tot

(W)

1.9

0.5

2.2

2.8

0.2

0.1

4.0

(A)

F(AV)

(A)

F(AV)

I_F(AV)= I_F(RMS)× √δ

V_o= 0.973 V; R_s= 0.0168 Ω

a = form factor = I_F(RMS)/ I_F(AV)

Vo = 0.973 V; Rs = 0.0168 Ω

Fig. 1. Forward power dissipation as a function of

average forward current; square waveform; maximum

values

Fig. 2. Forward power dissipation as a function

of average forward current; sinusoidal waveform;

maximum values

BYV29-600P

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Product data sheet

11 July 2017

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