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BYV29-600P PDF预览

BYV29-600P

更新时间: 2024-01-09 13:13:45
品牌 Logo 应用领域
瑞能 - WEEN /
页数 文件大小 规格书
10页 518K
描述
Ultrafast power diode

BYV29-600P 数据手册

 浏览型号BYV29-600P的Datasheet PDF文件第1页浏览型号BYV29-600P的Datasheet PDF文件第2页浏览型号BYV29-600P的Datasheet PDF文件第3页浏览型号BYV29-600P的Datasheet PDF文件第5页浏览型号BYV29-600P的Datasheet PDF文件第6页浏览型号BYV29-600P的Datasheet PDF文件第7页 
WeEn Semiconductors  
BYV29-600P  
Ultrafast power diode  
atc12-004  
4
3
2
atc12-003  
10  
FSM  
12  
I
I
I
F
FSM  
I
F(AV)  
(A)  
10  
8
150°C  
t
t
p
T
= 25 °C max  
10  
10  
j(init)  
6
4
2
10  
0
-5  
-4  
-3  
-2  
10  
10  
10  
10  
-50  
0
50  
100  
150  
T
200  
(°C)  
t
p
(s)  
mb  
Fig. 3. Forward current as a function of mounting base  
temperature; maximum values  
Fig. 4. Non-repetitive peak forward current as a function  
of pulse width; sinusoidal waveform; maximum values  
©
BYV29-600P  
All information provided in this document is subject to legal disclaimers.  
WeEn Semiconductors Co., Ltd. 2017. All rights reserved  
Product data sheet  
11 July 2017  
4 / 10  

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