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BYV29-300HE3/45 PDF预览

BYV29-300HE3/45

更新时间： 2024-11-13 22:57:07
品牌 Logo 应用领域
威世 - VISHAY /
页数 文件大小 规格书
5页 131K
描述
DIODE GEN PURP 300V 8A TO220AC

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中文翻译

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BYV29-300HE3/45 数据手册

 浏览型号BYV29-300HE3/45的Datasheet PDF文件第2页浏览型号BYV29-300HE3/45的Datasheet PDF文件第3页浏览型号BYV29-300HE3/45的Datasheet PDF文件第4页浏览型号BYV29-300HE3/45的Datasheet PDF文件第5页 
BYV29-xxx, BYV29F-xxx, BYV29B-xxx, UG8xT, UGF8xT, UGB8xT  
www.vishay.com  
Vishay General Semiconductor  
Ultrafast Rectifier  
FEATURES  
TO-220AC  
ITO-220AC  
• Power pack  
• Glass passivated chip junction  
• Ultrafast recovery time  
• Low switching losses, high efficiency  
• Low forward voltage drop  
2
• High forward surge capability  
2
1
• Meets MSL level 1, per J-STD-020, LF maximum peak of  
245 °C (for TO-263AB package)  
1
BYV29, UG8 Series  
BYV29F, UGF8 Series  
PIN 1  
PIN 1  
• Solder dip 275 °C max. 10 s, per JESD 22-B106  
(for TO-220AC and ITO-220AC package)  
CASE  
PIN 2  
PIN 2  
TO-263AB  
• AEC-Q101 qualified  
K
• Material categorization: for definitions of compliance  
please see www.vishay.com/doc?99912  
2
TYPICAL APPLICATIONS  
1
For use in high frequency rectifier of switching mode  
power supplies, inverters, freewheeling diodes, DC/DC  
converters, and other power switching application.  
BYV29B, UGB8 Series  
PIN 1  
K
PIN 2  
HEATSINK  
MECHANICAL DATA  
PRIMARY CHARACTERISTICS  
Case: TO-220AC, ITO-220AC, TO-263AB  
Molding compound meets UL 94 V-0 flammability rating  
IF(AV)  
8.0 A  
Base P/N-E3  
Base P/NHE3 - RoHS-compliant, AEC-Q101 qualified  
-
RoHS-compliant, commerical grade  
VRRM  
IFSM  
trr  
300 V to 400 V  
110 A  
Terminals: Matte tin plated leads, solderable per  
J-STD-002 and JESD 22-B102  
E3 suffix meets JESD 201 class 2 whisker test, HE3 suffix  
35 ns  
VF  
1.03 V  
TJ max.  
150 °C  
meets JESD 201 class 2 whisker test  
TO-220AC, ITO-220AC,  
TO-263AB  
Package  
Polarity: As marked  
Mounting Torque: 10 in-lbs max.  
Diode variations  
Single die  
MAXIMUM RATINGS (TC = 25 °C unless otherwise noted)  
BYV29-300  
UG8FT  
BYV29-400  
UG8GT  
PARAMETER  
SYMBOL  
UNIT  
Maximum repetitive peak reverse voltage  
Maximum working reverse voltage  
Maximum RMS voltage  
VRRM  
VRWM  
VRMS  
300  
300  
210  
300  
400  
400  
280  
400  
V
V
V
Maximum DC blocking voltage  
VDC  
V
A
Maximum average forward rectified current at TC = 100 °C  
IF(AV)  
8.0  
Peak forward surge current 8.3 ms single half sine-wave  
superimposed on rated load  
IFSM  
110  
A
Operating junction and storage temperature range  
TJ, TSTG  
VAC  
-40 to +150  
1500  
°C  
V
Isolation voltage (ITO-220AC only) from terminal to heatsink t = 1 min  
Revision: 08-Jan-15  
Document Number: 88557  
1
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com  
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT  
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000  
12345

中文翻译

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BYV29-300HE3/45 替代型号

型号 品牌 替代类型 描述 数据表
BYV29-300-E3/45 VISHAY

完全替代

 DIODE GEN PURP 300V 8A TO220AC
UG8FT-E3/45 VISHAY

完全替代

 DIODE 8 A, 300 V, SILICON, RECTIFIER DIODE, TO-220AC, ROHS COMPLIANT, PLASTIC PACKAGE-2, R

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