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BYV26EGP/65 PDF预览

BYV26EGP/65

更新时间: 2024-02-17 00:15:57
品牌 Logo 应用领域
威世 - VISHAY 二极管
页数 文件大小 规格书
4页 346K
描述
Rectifier Diode, 1 Element, 1A, 1000V V(RRM), Silicon, DO-204AC, PLASTIC, DO-15, 2 PIN

BYV26EGP/65 技术参数

是否Rohs认证:不符合生命周期:Obsolete
零件包装代码:DO-15包装说明:O-PALF-W2
针数:2Reach Compliance Code:unknown
ECCN代码:EAR99HTS代码:8541.10.00.80
风险等级:5.66Is Samacsys:N
其他特性:FREE WHEELING DIODE外壳连接:ISOLATED
配置:SINGLE二极管元件材料:SILICON
二极管类型:RECTIFIER DIODEJEDEC-95代码:DO-204AC
JESD-30 代码:O-PALF-W2JESD-609代码:e0
元件数量:1端子数量:2
最高工作温度:175 °C最低工作温度:-65 °C
最大输出电流:1 A封装主体材料:PLASTIC/EPOXY
封装形状:ROUND封装形式:LONG FORM
峰值回流温度(摄氏度):NOT SPECIFIED认证状态:Not Qualified
最大重复峰值反向电压:1000 V最大反向恢复时间:0.075 µs
表面贴装:NO端子面层:TIN LEAD
端子形式:WIRE端子位置:AXIAL
处于峰值回流温度下的最长时间:NOT SPECIFIEDBase Number Matches:1

BYV26EGP/65 数据手册

 浏览型号BYV26EGP/65的Datasheet PDF文件第2页浏览型号BYV26EGP/65的Datasheet PDF文件第3页浏览型号BYV26EGP/65的Datasheet PDF文件第4页 
BYV26DGP & BYV26EGP  
Vishay General Semiconductor  
Glass Passivated Ultrafast Rectifier  
Major Ratings and Characteristics  
IF(AV)  
VRRM  
IFSM  
trr  
1.0 A  
800 V, 1000 V  
30 A  
75 ns  
VF  
1.3 V  
Tj max.  
175 °C  
DO-204AC (DO-15)  
* Glass Encapsulation  
technique is covered by  
Patent No. 3,996,602,  
brazed-lead assembly  
to Patent No. 3,930,306  
Features  
Mechanical Data  
• Cavity-free glass-passivated junction  
• Ultrafast reverse recovery time  
• Low forward voltage drop  
• Low switching losses, high efficiency  
• High forward surge capability  
Case: DO-204AC, molded epoxy over glass body  
Epoxy meets UL-94V-0 Flammability rating  
Terminals: Matte tin plated leads, solderable per  
J-STD-002B and JESD22-B102D  
E3 suffix for commercial grade, HE3 suffix for high  
reliability grade (AEC Q101 qualified)  
• Meets environmental standard MIL-S-19500  
• Solder Dip 260 °C, 40 seconds  
Polarity: Color band denotes cathode end  
Typical Applications  
For use in high frequency rectification and freewheel-  
ing application in switching mode converters and  
inverters for consumer, computer and Telecommuni-  
cation  
Maximum Ratings  
TA = 25 °C unless otherwise specified  
Parameter  
Symbol  
VRRM  
BYV26DGP  
800  
BYV26EGP  
1000  
Unit  
V
Maximum repetitive peak reverse voltage  
Maximum RMS voltage  
VRMS  
VDC  
560  
800  
700  
V
V
A
Maximum DC blocking voltage  
1000  
Maximum average forward rectified current 0.375" (9.5 mm)  
lead length (See Fig. 1)  
IF(AV)  
1.0  
30  
10  
Peak forward surge current 10 ms single half sine-wave  
superimposed on rated load  
Non repetitive peak reverse energy (1)  
IFSM  
A
ERSM  
mj  
°C  
Operating junction and storage temperature range  
TJ, TSTG  
- 65 to + 175  
Notes:  
(1) Peak reverse energy measured at IR = 400 mA, TJ = TJ max. on inductive load, t = 20 µs  
Document Number 88554  
10-Aug-05  
www.vishay.com  
1

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