Datasheet > BYS10-45

BYS10-45

更新时间： 2024-09-26 14:53:39

品牌	Logo	应用领域
森美特 - SUNMATE		/
页数	文件大小	规格书
2页	1463K
描述
Rectifier device Schottky Diode

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中文翻译

获取价格

数据手册

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BYS10-45 数据手册

BYS10-25 - BYS10-45

SURFACE MOUNT SCHOTTKY BARRIER DIODES

VOLTAGE RANGE: 25 - 45V

CURRENT: 1.5 A

Features

High efficiency

Low power losses

Very low switching losses

Low reverse current

High surge capability

SMA(DO-214AC)

Dim

MinMax

Mechanical Data

2.29

4.00

1.27

0.15

4.80

0.10

0.76

2.01

2.92

4.60

1.63

0.31

5.59

0.20

1.52

2.62

Case: SMA/DO-214AC, Molded Plastic

Terminals: Solder Plated, Solderable

per MIL-STD-750, Method 2026

Polarity: Cathode Band or Cathode Notch

Marking: Type Number

Weight: 0.064 grams (approx.)

All Dimensions in mm

@ T_A= 25°C unless otherwise specified

Maximum Ratings

Parameter

Reverse voltage

=Repetitive peak reverse voltage

Test Conditions

Type

Symbol

V_R

=V_RRM

Value

Unit

BYS10–25

BYS10–35

BYS10–45

Peak forward surge current

Average forward current

t_p=10ms, half sinewave

I_FSM

I_FAV

1.5

Junction and storage

temperature range

T_j=T_stg–55...+150

Maximum Thermal Resistance ^{@ T}_A^{= 25°C unless otherwise specified}

Parameter

Junction lead

Junction ambient mounted on epoxy–glass hard tissue

Test Conditions

Symbol Value

Unit

K/W

T_L=constant

R_thJL

R_thJA

150

125

100

mounted on epoxy–glass hard tissue, 50mm²35 m Cu

mounted on Al–oxid–ceramic (Al₂O₃), 50mm²35 m Cu

@ T_A= 25°C unless otherwise specified

Electrical Characteristics

Parameter

Forward voltage

Reverse current

Test Conditions

Type

Symbol Min

Typ Max Unit

I_F=1A

V_F

I_R

500

V_R=V_RRM

V_R=V_RRM, T_j=100 C

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中文翻译

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